DOI: 10.1063/1.2357890. InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition

InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition

10.1063/1.2357890

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high-performance III-V materials with Si technology. We report epitaxial growth on (111)-oriented Si surfaces of highly aligned, single crystalline InP nanowires by chemical vapor deposition catalyzed by Au. We demonstrate laterally oriented InP nanowires bridging between vertical (111) Si surfaces formed by anisotropically etching a (110)-oriented Si substrate or the top Si layer of a silicon-on-insulator wafer. This method of connecting nanowires offers a facile way of integrating nanoscale III-V optoelectronic and photonic devices with Si.

Bibliography

Yi, S. S., Girolami, G., Amano, J., Saif Islam, M., Sharma, S., Kamins, T. I., & Kimukin, I. (2006). InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition. Applied Physics Letters, 89(13).

Authors 7

S. S. Yi (first)
G. Girolami (additional)
J. Amano (additional)
M. Saif Islam (additional)
S. Sharma (additional)
T. I. Kamins (additional)
I. Kimukin (additional)

References 10 Referenced 35

{'key': '2023070219535178100_c1', 'first-page': '1964', 'volume': '64', 'year': '1993', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1993)
10.1063/1.111007 / Appl. Phys. Lett. (1994)
10.1063/1.1753975 / Appl. Phys. Lett. (1964)
10.1021/nl010099n / Nano Lett. (2002)
10.1038/415617a / Nature (London) (2002)
10.1021/nl0156888 / Nano Lett. (2002)
10.1021/nl035166n / Nano Lett. (2004)
10.1021/nl0487267 / Nano Lett. (2004)
10.1088/0957-4484/15/5/L01 / Nanotechnology (2004)
10.1007/s00339-004-3177-x / Appl. Phys. A: Mater. Sci. Process. (2005)

Dates

Type	When
Created	18 years, 11 months ago (Sept. 28, 2006, 6:20 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 3:54 p.m.)
Indexed	1 month ago (July 30, 2025, 6:47 a.m.)
Issued	18 years, 11 months ago (Sept. 25, 2006)
Published	18 years, 11 months ago (Sept. 25, 2006)
Published Online	18 years, 11 months ago (Sept. 28, 2006)
Published Print	18 years, 11 months ago (Sept. 25, 2006)

Funders 0

None

BibTeX

@article{Yi_2006, title={InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2357890}, DOI={10.1063/1.2357890}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yi, S. S. and Girolami, G. and Amano, J. and Saif Islam, M. and Sharma, S. and Kamins, T. I. and Kimukin, I.}, year={2006}, month=sep }

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