DOI: 10.1063/1.2357013. High-performance ZnO nanowire field effect transistors

High-performance ZnO nanowire field effect transistors

10.1063/1.2357013

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

ZnO nanowires with high crystalline and optical properties are characterized, showing strong effect of the surface defect states. In order to optimize the performance of devices based on these nanowires, a series of complementary metal-oxide semiconductor compatible surface passivation procedures is employed. Electrical transport measurements demonstrate significantly reduced subthreshold swing, high on/off ratio, and unprecedented field effect mobility.

Bibliography

Chang, P.-C., Fan, Z., Chien, C.-J., Stichtenoth, D., Ronning, C., & Lu, J. G. (2006). High-performance ZnO nanowire field effect transistors. Applied Physics Letters, 89(13).

Authors 6

Pai-Chun Chang (first)
Zhiyong Fan (additional)
Chung-Jen Chien (additional)
Daniel Stichtenoth (additional)
Carsten Ronning (additional)
Jia Grace Lu (additional)

References 24 Referenced 220

10.1021/nl034841q / Nano Lett. (2004)
10.1021/nl025875l / Nano Lett. (2003)
10.1016/j.jcrysgro.2004.08.073 / J. Cryst. Growth (2004)
10.1063/1.1821648 / Appl. Phys. Lett. (2004)
10.1063/1.1836870 / Appl. Phys. Lett. (2004)
10.1063/1.1759069 / Appl. Phys. Lett. (2004)
10.1002/adma.200401732 / Adv. Mater. (Weinheim, Ger.) (2005)
10.1021/nl034780w / Nano Lett. (2004)
10.1002/adma.200305729 / Adv. Mater. (Weinheim, Ger.) (2004)
10.1002/1521-4095(20020116)14:2<158::AID-ADMA158>3.0.CO;2-W / Adv. Mater. (Weinheim, Ger.) (2002)
10.1063/1.1883715 / Appl. Phys. Lett. (2005)
10.1021/cm049182c / Chem. Mater. (2004)
10.1063/1.1753975 / Appl. Phys. Lett. (1964)
10.1088/0268-1242/20/4/008 / Semicond. Sci. Technol. (2005)
10.1088/0957-4484/16/4/046 / Nanotechnology (2005)
{'volume-title': 'Semiconductor Optics', 'year': '2005', 'edition': '2nd ed.', 'key': '2023070219493398500_c16'} / Semiconductor Optics (2005)
10.1063/1.126703 / Appl. Phys. Lett. (2000)
10.1103/PhysRevB.71.115439 / Phys. Rev. B (2005)
10.1016/j.jcrysgro.2005.10.059 / J. Cryst. Growth (2006)
10.1007/s11664-002-0197-1 / J. Electron. Mater. (2002)
10.1080/10408430490888977 / Crit. Rev. Solid State Mater. Sci. (2004)
10.1063/1.122477 / Appl. Phys. Lett. (1998)
10.1038/nmat769 / Nat. Mater. (2002)
10.1063/1.1794351 / Appl. Phys. Lett. (2004)

Dates

Type	When
Created	18 years, 11 months ago (Sept. 27, 2006, 6:22 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 3:49 p.m.)
Indexed	1 day, 8 hours ago (Aug. 28, 2025, 8:34 a.m.)
Issued	18 years, 11 months ago (Sept. 25, 2006)
Published	18 years, 11 months ago (Sept. 25, 2006)
Published Online	18 years, 11 months ago (Sept. 27, 2006)
Published Print	18 years, 11 months ago (Sept. 25, 2006)

Funders 0

None

BibTeX

@article{Chang_2006, title={High-performance ZnO nanowire field effect transistors}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2357013}, DOI={10.1063/1.2357013}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chang, Pai-Chun and Fan, Zhiyong and Chien, Chung-Jen and Stichtenoth, Daniel and Ronning, Carsten and Lu, Jia Grace}, year={2006}, month=sep }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        28
      ]
    ],
    "date-time": "2025-08-28T12:34:22Z",
    "timestamp": 1756384462517,
    "version": "3.41.2"
  },
  "reference-count": 24,
  "publisher": "AIP Publishing",
  "issue": "13",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2006,
        9,
        25
      ]
    ]
  },
  "abstract": "<jats:p>ZnO nanowires with high crystalline and optical properties are characterized, showing strong effect of the surface defect states. In order to optimize the performance of devices based on these nanowires, a series of complementary metal-oxide semiconductor compatible surface passivation procedures is employed. Electrical transport measurements demonstrate significantly reduced subthreshold swing, high on/off ratio, and unprecedented field effect mobility.</jats:p>",
  "DOI": "10.1063/1.2357013",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2006,
        9,
        27
      ]
    ],
    "date-time": "2006-09-27T22:22:00Z",
    "timestamp": 1159395720000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 220,
  "title": "High-performance ZnO nanowire field effect transistors",
  "prefix": "10.1063",
  "volume": "89",
  "author": [
    {
      "given": "Pai-Chun",
      "family": "Chang",
      "sequence": "first",
      "affiliation": [
        {
          "name": "University of California Department of Chemical Engineering and Materials Science and Department of Electrical Engineering and Computer Science, , Irvine, California 92697"
        }
      ]
    },
    {
      "given": "Zhiyong",
      "family": "Fan",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of California Department of Chemical Engineering and Materials Science and Department of Electrical Engineering and Computer Science, , Irvine, California 92697"
        }
      ]
    },
    {
      "given": "Chung-Jen",
      "family": "Chien",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of California Department of Chemical Engineering and Materials Science and Department of Electrical Engineering and Computer Science, , Irvine, California 92697"
        }
      ]
    },
    {
      "given": "Daniel",
      "family": "Stichtenoth",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Universit\u00e4t G\u00f6ttingen II. Physikalisches Institut, , 37077 G\u00f6ttingen, Germany"
        }
      ]
    },
    {
      "given": "Carsten",
      "family": "Ronning",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Universit\u00e4t G\u00f6ttingen II. Physikalisches Institut, , 37077 G\u00f6ttingen, Germany"
        }
      ]
    },
    {
      "given": "Jia Grace",
      "family": "Lu",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Southern California Department of Physics and Astronomy, , Los Angeles, California 90089"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2006,
        9,
        27
      ]
    ]
  },
  "reference": [
    {
      "key": "2023070219493398500_c1",
      "doi-asserted-by": "publisher",
      "first-page": "35",
      "DOI": "10.1021/nl034841q",
      "volume": "4",
      "year": "2004",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023070219493398500_c2",
      "doi-asserted-by": "publisher",
      "first-page": "149",
      "DOI": "10.1021/nl025875l",
      "volume": "3",
      "year": "2003",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023070219493398500_c3",
      "doi-asserted-by": "crossref",
      "first-page": "175",
      "DOI": "10.1016/j.jcrysgro.2004.08.073",
      "volume": "272",
      "year": "2004",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2023070219493398500_c4",
      "doi-asserted-by": "publisher",
      "first-page": "5052",
      "DOI": "10.1063/1.1821648",
      "volume": "85",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219493398500_c5",
      "doi-asserted-by": "publisher",
      "first-page": "5923",
      "DOI": "10.1063/1.1836870",
      "volume": "85",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219493398500_c6",
      "doi-asserted-by": "publisher",
      "first-page": "4553",
      "DOI": "10.1063/1.1759069",
      "volume": "84",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219493398500_c7",
      "doi-asserted-by": "publisher",
      "first-page": "1393",
      "DOI": "10.1002/adma.200401732",
      "volume": "17",
      "year": "2005",
      "journal-title": "Adv. Mater. (Weinheim, Ger.)"
    },
    {
      "key": "2023070219493398500_c8",
      "doi-asserted-by": "publisher",
      "first-page": "197",
      "DOI": "10.1021/nl034780w",
      "volume": "4",
      "year": "2004",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023070219493398500_c9",
      "doi-asserted-by": "publisher",
      "first-page": "87",
      "DOI": "10.1002/adma.200305729",
      "volume": "16",
      "year": "2004",
      "journal-title": "Adv. Mater. (Weinheim, Ger.)"
    },
    {
      "key": "2023070219493398500_c10",
      "doi-asserted-by": "publisher",
      "first-page": "158",
      "DOI": "10.1002/1521-4095(20020116)14:2&lt;158::AID-ADMA158&gt;3.0.CO;2-W",
      "volume": "14",
      "year": "2002",
      "journal-title": "Adv. Mater. (Weinheim, Ger.)"
    },
    {
      "key": "2023070219493398500_c11",
      "doi-asserted-by": "publisher",
      "first-page": "123510",
      "DOI": "10.1063/1.1883715",
      "volume": "86",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219493398500_c12",
      "doi-asserted-by": "crossref",
      "first-page": "5133",
      "DOI": "10.1021/cm049182c",
      "volume": "16",
      "year": "2004",
      "journal-title": "Chem. Mater."
    },
    {
      "key": "2023070219493398500_c13",
      "doi-asserted-by": "publisher",
      "first-page": "89",
      "DOI": "10.1063/1.1753975",
      "volume": "4",
      "year": "1964",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219493398500_c14",
      "doi-asserted-by": "publisher",
      "first-page": "S62",
      "DOI": "10.1088/0268-1242/20/4/008",
      "volume": "20",
      "year": "2005",
      "journal-title": "Semicond. Sci. Technol."
    },
    {
      "key": "2023070219493398500_c15",
      "doi-asserted-by": "publisher",
      "first-page": "609",
      "DOI": "10.1088/0957-4484/16/4/046",
      "volume": "16",
      "year": "2005",
      "journal-title": "Nanotechnology"
    },
    {
      "volume-title": "Semiconductor Optics",
      "year": "2005",
      "edition": "2nd ed.",
      "key": "2023070219493398500_c16"
    },
    {
      "key": "2023070219493398500_c17",
      "doi-asserted-by": "publisher",
      "first-page": "3549",
      "DOI": "10.1063/1.126703",
      "volume": "76",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219493398500_c18",
      "doi-asserted-by": "publisher",
      "first-page": "115439",
      "DOI": "10.1103/PhysRevB.71.115439",
      "volume": "71",
      "year": "2005",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023070219493398500_c19",
      "doi-asserted-by": "crossref",
      "first-page": "149",
      "DOI": "10.1016/j.jcrysgro.2005.10.059",
      "volume": "287",
      "year": "2006",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2023070219493398500_c20",
      "doi-asserted-by": "crossref",
      "first-page": "868",
      "DOI": "10.1007/s11664-002-0197-1",
      "volume": "31",
      "year": "2002",
      "journal-title": "J. Electron. Mater."
    },
    {
      "key": "2023070219493398500_c21",
      "doi-asserted-by": "crossref",
      "first-page": "111",
      "DOI": "10.1080/10408430490888977",
      "volume": "29",
      "year": "2004",
      "journal-title": "Crit. Rev. Solid State Mater. Sci."
    },
    {
      "key": "2023070219493398500_c22",
      "doi-asserted-by": "publisher",
      "first-page": "2447",
      "DOI": "10.1063/1.122477",
      "volume": "73",
      "year": "1998",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219493398500_c23",
      "doi-asserted-by": "publisher",
      "first-page": "241",
      "DOI": "10.1038/nmat769",
      "volume": "1",
      "year": "2002",
      "journal-title": "Nat. Mater."
    },
    {
      "key": "2023070219493398500_c24",
      "doi-asserted-by": "publisher",
      "first-page": "2274",
      "DOI": "10.1063/1.1794351",
      "volume": "85",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "updated-by": [
    {
      "updated": {
        "date-parts": [
          [
            2009,
            2,
            19
          ]
        ],
        "date-time": "2009-02-19T00:00:00Z",
        "timestamp": 1235001600000
      },
      "DOI": "10.1063/1.2948901",
      "type": "correction",
      "source": "publisher",
      "label": "Correction"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2357013/13522651/133113_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2357013/13522651/133113_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        2
      ]
    ],
    "date-time": "2023-07-02T19:49:42Z",
    "timestamp": 1688327382000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/89/13/133113/326688/High-performance-ZnO-nanowire-field-effect"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2006,
        9,
        25
      ]
    ]
  },
  "references-count": 24,
  "journal-issue": {
    "issue": "13",
    "published-print": {
      "date-parts": [
        [
          2006,
          9,
          25
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2357013",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2006,
        9,
        25
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2006,
        9,
        25
      ]
    ]
  },
  "article-number": "133113"
}