Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

The electronic and magnetoresistive properties of metal/oxide/p-InMnAs magnetic tunnel junctions have been characterized. Ni and Al were each used as the metal electrode, while Al2O3 and SiO2 layers were utilized as tunnel barriers. A conductance well, with a width ∼100meV less than the band gap of InMnAs, is observed for all samples, consistent with tunneling between a metal and p-type degenerate semiconductor. At temperatures up to 150K, a negative magnetoresistance is measured in the tunnel junctions. The absence of the normal tunnel magnetoresistance effect in the Ni-based junctions is attributed to strong interlayer coupling between the ferromagnetic Ni and InMnAs layers.

Bibliography

May, S. J., Phillips, P. J., & Wessels, B. W. (2006). Negative magnetoresistance in metal/oxide/InMnAs tunnel junctions. Journal of Applied Physics, 100(5).

Authors 3
  1. S. J. May (first)
  2. P. J. Phillips (additional)
  3. B. W. Wessels (additional)
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Dates
Type When
Created 18 years, 11 months ago (Sept. 20, 2006, 6:24 p.m.)
Deposited 2 years ago (Aug. 3, 2023, 3:56 p.m.)
Indexed 3 weeks, 5 days ago (July 30, 2025, 6:47 a.m.)
Issued 18 years, 11 months ago (Sept. 1, 2006)
Published 18 years, 11 months ago (Sept. 1, 2006)
Published Online 18 years, 11 months ago (Sept. 11, 2006)
Published Print 18 years, 11 months ago (Sept. 1, 2006)
Funders 0

None

@article{May_2006, title={Negative magnetoresistance in metal/oxide/InMnAs tunnel junctions}, volume={100}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.2337399}, DOI={10.1063/1.2337399}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={May, S. J. and Phillips, P. J. and Wessels, B. W.}, year={2006}, month=sep }