Abstract
The electronic and magnetoresistive properties of metal/oxide/p-InMnAs magnetic tunnel junctions have been characterized. Ni and Al were each used as the metal electrode, while Al2O3 and SiO2 layers were utilized as tunnel barriers. A conductance well, with a width ∼100meV less than the band gap of InMnAs, is observed for all samples, consistent with tunneling between a metal and p-type degenerate semiconductor. At temperatures up to 150K, a negative magnetoresistance is measured in the tunnel junctions. The absence of the normal tunnel magnetoresistance effect in the Ni-based junctions is attributed to strong interlayer coupling between the ferromagnetic Ni and InMnAs layers.
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Dates
Type | When |
---|---|
Created | 18 years, 11 months ago (Sept. 20, 2006, 6:24 p.m.) |
Deposited | 2 years ago (Aug. 3, 2023, 3:56 p.m.) |
Indexed | 3 weeks, 5 days ago (July 30, 2025, 6:47 a.m.) |
Issued | 18 years, 11 months ago (Sept. 1, 2006) |
Published | 18 years, 11 months ago (Sept. 1, 2006) |
Published Online | 18 years, 11 months ago (Sept. 11, 2006) |
Published Print | 18 years, 11 months ago (Sept. 1, 2006) |
@article{May_2006, title={Negative magnetoresistance in metal/oxide/InMnAs tunnel junctions}, volume={100}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.2337399}, DOI={10.1063/1.2337399}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={May, S. J. and Phillips, P. J. and Wessels, B. W.}, year={2006}, month=sep }