DOI: 10.1063/1.2337277. Field emission from honeycomblike network of vertically aligned AlN nanoplatelets

Field emission from honeycomblike network of vertically aligned AlN nanoplatelets

10.1063/1.2337277

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Honeycomblike network of vertically aligned AlN nanoplatelets was synthesized on etched Si substrate via a simple vapor phase method without catalyst. The nanoplatelets are hexagonal wurtzite AlN and their thickness is 10–100nm. Field emission (FE) measurements showed that this nanostructure has a low turn-on field of 3.2–5.0V∕μm and a threshold field of 7.8–12.1V∕μm at sample-anode distances of 50–100μm. The fluctuation of FE current with density of 10mA∕cm2 over 5h is lower than 3%. The low turn-on and threshold fields and the small fluctuation of current demonstrate that this two-dimensional AlN nanostructure is a promising FE material.

Bibliography

Tang, Y. B., Cong, H. T., & Cheng, H.-M. (2006). Field emission from honeycomblike network of vertically aligned AlN nanoplatelets. Applied Physics Letters, 89(9).

Authors 3

Y. B. Tang (first)
H. T. Cong (additional)
H.-M. Cheng (additional)

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Dates

Type	When
Created	18 years, 11 months ago (Aug. 30, 2006, 6:11 p.m.)
Deposited	2 years, 2 months ago (June 23, 2023, 1:33 a.m.)
Indexed	4 weeks ago (July 30, 2025, 6:47 a.m.)
Issued	18 years, 11 months ago (Aug. 28, 2006)
Published	18 years, 11 months ago (Aug. 28, 2006)
Published Online	18 years, 11 months ago (Aug. 30, 2006)
Published Print	18 years, 11 months ago (Aug. 28, 2006)

Funders 0

None

BibTeX

@article{Tang_2006, title={Field emission from honeycomblike network of vertically aligned AlN nanoplatelets}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2337277}, DOI={10.1063/1.2337277}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tang, Y. B. and Cong, H. T. and Cheng, H.-M.}, year={2006}, month=aug }

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