DOI: 10.1063/1.2335390. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

10.1063/1.2335390

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Room temperature electron mobility of 1170cm2∕Vs is obtained in an undoped, lattice-matched, Al0.82In0.18N∕GaN field-effect transistor heterostructure, while keeping a high (2.6±0.3)×1013cm−2 electron gas density intrinsic to the Al0.82In0.18N∕GaN material system. This results in a two-dimensional sheet resistance of 210Ω∕◻. The high mobility of these layers, grown by metal-organic vapor phase epitaxy on sapphire substrate, is obtained thanks to the insertion of an optimized AlN interlayer, reducing the alloy related interface roughness scattering.

Bibliography

Gonschorek, M., Carlin, J.-F., Feltin, E., Py, M. A., & Grandjean, N. (2006). High electron mobility lattice-matched AlInNâGaN field-effect transistor heterostructures. Applied Physics Letters, 89(6).

Authors 5

M. Gonschorek (first)
J.-F. Carlin (additional)
E. Feltin (additional)
M. A. Py (additional)
N. Grandjean (additional)

References 15 Referenced 285

10.1116/1.1556398 / J. Vac. Sci. Technol. B (2003)
10.1063/1.371866 / J. Appl. Phys. (2000)
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{'key': '2023062215522614200_c15', 'first-page': '414', 'volume': '289', 'year': '2006', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (2006)

Dates

Type	When
Created	19 years ago (Aug. 10, 2006, 9:29 p.m.)
Deposited	2 years, 1 month ago (June 22, 2023, 8:44 p.m.)
Indexed	1 week, 2 days ago (Aug. 12, 2025, 6:11 p.m.)
Issued	19 years ago (Aug. 7, 2006)
Published	19 years ago (Aug. 7, 2006)
Published Online	19 years ago (Aug. 9, 2006)
Published Print	19 years ago (Aug. 7, 2006)

Funders 0

None

BibTeX

@article{Gonschorek_2006, title={High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2335390}, DOI={10.1063/1.2335390}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Gonschorek, M. and Carlin, J.-F. and Feltin, E. and Py, M. A. and Grandjean, N.}, year={2006}, month=aug }

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