Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Photoluminescence imaging is demonstrated to be an extremely fast spatially resolved characterization technique for large silicon wafers. The spatial variation of the effective minority carrier lifetime is measured without being affected by minority carrier trapping or by excess carriers in space charge regions, effects that lead to experimental artifacts in other techniques. Photoluminescence imaging is contactless and can therefore be used for process monitoring before and after individual processing stages, for example, in photovoltaics research. Photoluminescence imaging is also demonstrated to be fast enough to be used as an in-line tool for spatially resolved characterization in an industrial environment.

Bibliography

Trupke, T., Bardos, R. A., Schubert, M. C., & Warta, W. (2006). Photoluminescence imaging of silicon wafers. Applied Physics Letters, 89(4).

Authors 4
  1. T. Trupke (first)
  2. R. A. Bardos (additional)
  3. M. C. Schubert (additional)
  4. W. Warta (additional)
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Dates
Type When
Created 19 years, 1 month ago (July 26, 2006, 6:05 p.m.)
Deposited 2 years ago (Aug. 4, 2023, 8:38 p.m.)
Indexed 2 days ago (Sept. 2, 2025, 6:38 a.m.)
Issued 19 years, 1 month ago (July 24, 2006)
Published 19 years, 1 month ago (July 24, 2006)
Published Online 19 years, 1 month ago (July 26, 2006)
Published Print 19 years, 1 month ago (July 24, 2006)
Funders 0

None

@article{Trupke_2006, title={Photoluminescence imaging of silicon wafers}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2234747}, DOI={10.1063/1.2234747}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Trupke, T. and Bardos, R. A. and Schubert, M. C. and Warta, W.}, year={2006}, month=jul }