Abstract
Photoluminescence imaging is demonstrated to be an extremely fast spatially resolved characterization technique for large silicon wafers. The spatial variation of the effective minority carrier lifetime is measured without being affected by minority carrier trapping or by excess carriers in space charge regions, effects that lead to experimental artifacts in other techniques. Photoluminescence imaging is contactless and can therefore be used for process monitoring before and after individual processing stages, for example, in photovoltaics research. Photoluminescence imaging is also demonstrated to be fast enough to be used as an in-line tool for spatially resolved characterization in an industrial environment.
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Dates
Type | When |
---|---|
Created | 19 years, 1 month ago (July 26, 2006, 6:05 p.m.) |
Deposited | 2 years ago (Aug. 4, 2023, 8:38 p.m.) |
Indexed | 2 days ago (Sept. 2, 2025, 6:38 a.m.) |
Issued | 19 years, 1 month ago (July 24, 2006) |
Published | 19 years, 1 month ago (July 24, 2006) |
Published Online | 19 years, 1 month ago (July 26, 2006) |
Published Print | 19 years, 1 month ago (July 24, 2006) |
@article{Trupke_2006, title={Photoluminescence imaging of silicon wafers}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2234747}, DOI={10.1063/1.2234747}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Trupke, T. and Bardos, R. A. and Schubert, M. C. and Warta, W.}, year={2006}, month=jul }