Abstract
Ti 4 + ion-doped BiFeO3 thin films were prepared by sol-gel spin-coating technique on (111)Pt∕Ti∕SiO2∕Si substrates. X-ray diffraction and scanning electron microscope revealed the single phase, and good surface and cross-section morphologies of the films, respectively. Leakage current density measurement indicated that the quality of the BiFeO3 films was improved by Ti4+ doping. By introducing a small amount of Ti ions into the sol-gel solution-processed BiFeO3 films, large enhancement in both remnant and saturation polarizations of the doped-BiFeO3 films in comparisons with the undoped BiFeO3 films was observed, due to the reduced leakage current, stabilization of the ferroelectric distortion by Ti4+, and more homogenous microstructure.
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Dates
Type | When |
---|---|
Created | 19 years, 1 month ago (Aug. 4, 2006, 9:35 p.m.) |
Deposited | 2 years, 2 months ago (July 2, 2023, 11:26 p.m.) |
Indexed | 1 month, 1 week ago (July 30, 2025, 6:47 a.m.) |
Issued | 19 years, 1 month ago (July 31, 2006) |
Published | 19 years, 1 month ago (July 31, 2006) |
Published Online | 19 years, 1 month ago (Aug. 3, 2006) |
Published Print | 19 years, 1 month ago (July 31, 2006) |
@article{Wang_2006, title={Enhanced ferroelectricity in Ti-doped multiferroic BiFeO3 thin films}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2222242}, DOI={10.1063/1.2222242}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wang, Yao and Nan, Ce-Wen}, year={2006}, month=jul }