DOI: 10.1063/1.2222241. Dependence of spin-transfer switching current on free layer thickness in Co–Fe–B∕MgO∕Co–Fe

Dependence of spin-transfer switching current on free layer thickness in Co–Fe–B∕MgO∕Co–Fe–B magnetic tunnel junctions

10.1063/1.2222241

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Magnetoresistance (MR) and spin-transfer switching (STS) properties were investigated in Co–Fe–B∕MgO∕Co–Fe–B magnetic tunnel junctions as a function of free layer thickness (dFree). The MR ratio was about 140% at dFree⩾2nm. It decreased to about 80% at dFree=1.5nm. Both switching currents and thermal stability were roughly proportional to dFree. The averaged intrinsic switching current density (Jc0av) was 1×107–2×107A∕cm2. The thermal stability of parallel magnetization state was greater than that of antiparallel state. The feasibility of the STS write scheme for nonvolatile magnetic random access memory was discussed.

Bibliography

Kubota, H., Fukushima, A., Ootani, Y., Yuasa, S., Ando, K., Maehara, H., Tsunekawa, K., Djayaprawira, D. D., Watanabe, N., & Suzuki, Y. (2006). Dependence of spin-transfer switching current on free layer thickness in CoâFeâBâMgOâCoâFeâB magnetic tunnel junctions. Applied Physics Letters, 89(3).

Authors 10

Hitoshi Kubota (first)
Akio Fukushima (additional)
Yuichi Ootani (additional)
Shinji Yuasa (additional)
Koji Ando (additional)
Hiroki Maehara (additional)
Koji Tsunekawa (additional)
David D. Djayaprawira (additional)
Naoki Watanabe (additional)
Yoshishige Suzuki (additional)

References 18 Referenced 41

10.1016/0304-8853(96)00062-5 / J. Magn. Magn. Mater. (1996)
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10.1103/PhysRevLett.84.3149 / Phys. Rev. Lett. (2000)
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10.1038/nmat1257 / Nat. Mater. (2004)
10.1038/nmat1256 / Nat. Mater. (2004)
10.1063/1.1871344 / Appl. Phys. Lett. (2005)
10.1109/TMAG.2005.854816 / IEEE Trans. Magn. (2005)
10.1143/JJAP.44.L1237 / Jpn. J. Appl. Phys., Part 2 (2005)
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10.1143/JJAP.44.L1267 / Jpn. J. Appl. Phys., Part 2 (2005)
10.1103/PhysRevLett.89.226802 / Phys. Rev. Lett. (2002)
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10.1103/PhysRevLett.92.088302 / Phys. Rev. Lett. (2004)
10.1063/1.1829140 / Appl. Phys. Lett. (2004)
10.1103/PhysRevB.71.024411 / Phys. Rev. B (2005)
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10.1063/1.2011795 / Appl. Phys. Lett. (2005)

Dates

Type	When
Created	19 years, 1 month ago (July 19, 2006, 6:43 p.m.)
Deposited	2 years ago (Aug. 1, 2023, 12:07 a.m.)
Indexed	4 weeks, 2 days ago (July 30, 2025, 6:47 a.m.)
Issued	19 years, 1 month ago (July 17, 2006)
Published	19 years, 1 month ago (July 17, 2006)
Published Online	19 years, 1 month ago (July 19, 2006)
Published Print	19 years, 1 month ago (July 17, 2006)

Funders 0

None

BibTeX

@article{Kubota_2006, title={Dependence of spin-transfer switching current on free layer thickness in Co–Fe–B∕MgO∕Co–Fe–B magnetic tunnel junctions}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2222241}, DOI={10.1063/1.2222241}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kubota, Hitoshi and Fukushima, Akio and Ootani, Yuichi and Yuasa, Shinji and Ando, Koji and Maehara, Hiroki and Tsunekawa, Koji and Djayaprawira, David D. and Watanabe, Naoki and Suzuki, Yoshishige}, year={2006}, month=jul }

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