Abstract
The ability to fabricate large-area, uniform emitters is an important factor in many vacuum microelectronics applications, especially for field emission displays. In this letter, we measured the field emission properties of uniform silicon nanowire emitters prepared by hydrogen plasma etching using in situ high-resolution scanning electron microscopy and a tungsten anode of 1μm diameter. Our results indicate that the field emission properties are improved upon increasing the etching time; this process sharpens the nanowires’ geometry and lowers their work function. These highly uniform (with respect to length, diameter, and distribution) nanowires display great potential for application within many field emission nanoelectronics devices.
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Dates
Type | When |
---|---|
Created | 19 years ago (Aug. 9, 2006, 1:02 p.m.) |
Deposited | 3 months, 1 week ago (May 29, 2025, 2:05 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:47 a.m.) |
Issued | 19 years, 2 months ago (June 26, 2006) |
Published | 19 years, 2 months ago (June 26, 2006) |
Published Online | 19 years, 2 months ago (June 30, 2006) |
Published Print | 19 years, 2 months ago (June 26, 2006) |
@article{Cheng_2006, title={Hydrogen plasma dry etching method for field emission application}, volume={88}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2218824}, DOI={10.1063/1.2218824}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Cheng, T. C. and Shieh, J. and Huang, W. J. and Yang, M. C. and Cheng, M. H. and Lin, H. M. and Chang, M. N.}, year={2006}, month=jun }