Abstract
Results are presented for ZnO-based ultraviolet light emitting diodes (LEDs) that employ a BeZnO∕ZnO active layer comprised of seven quantum wells. Arsenic and gallium are used for p-type and n-type layers. The ZnO-based LEDs show two dominant electroluminescence peaks located in the ultraviolet spectral region between 360 and 390nm, as well as a broad peak at 550nm.
References
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Dates
Type | When |
---|---|
Created | 19 years, 2 months ago (June 13, 2006, 6:19 p.m.) |
Deposited | 2 years ago (July 31, 2023, 8:42 p.m.) |
Indexed | 1 week, 2 days ago (Aug. 21, 2025, 12:35 p.m.) |
Issued | 19 years, 2 months ago (June 12, 2006) |
Published | 19 years, 2 months ago (June 12, 2006) |
Published Online | 19 years, 2 months ago (June 13, 2006) |
Published Print | 19 years, 2 months ago (June 12, 2006) |
@article{Ryu_2006, title={Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes}, volume={88}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2210452}, DOI={10.1063/1.2210452}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ryu, Yungryel and Lee, Tae-Seok and Lubguban, Jorge A. and White, Henry W. and Kim, Bong-Jin and Park, Yoon-Soo and Youn, Chang-Joo}, year={2006}, month=jun }