DOI: 10.1063/1.2210087. Improvement of resistive memory switching in NiO using IrO2

Improvement of resistive memory switching in NiO using IrO2

10.1063/1.2210087

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

For the development of resistive memory devices using NiO, improvements of several memory switching properties are required. In NiO memory cells with noble metal electrodes, broad dispersions of memory switching parameters are generally observed with continuous memory switchings. We report the improvements in minimizing the dispersions of all memory switching parameters using thin IrO2 layers between NiO and electrodes. The role of thin IrO2 layers on NiO growth and memory switching stabilization are discussed.

Bibliography

Kim, D. C., Lee, M. J., Ahn, S. E., Seo, S., Park, J. C., Yoo, I. K., Baek, I. G., Kim, H. J., Yim, E. K., Lee, J. E., Park, S. O., Kim, H. S., Chung, U.-I., Moon, J. T., & Ryu, B. I. (2006). Improvement of resistive memory switching in NiO using IrO2. Applied Physics Letters, 88(23).

Authors 15

D. C. Kim (first)
M. J. Lee (additional)
S. E. Ahn (additional)
S. Seo (additional)
J. C. Park (additional)
I. K. Yoo (additional)
I. G. Baek (additional)
H. J. Kim (additional)
E. K. Yim (additional)
J. E. Lee (additional)
S. O. Park (additional)
H. S. Kim (additional)
U-In Chung (additional)
J. T. Moon (additional)
B. I. Ryu (additional)

References 11 Referenced 172

{'volume': '2004', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'first-page': '587', 'key': '2023062217582196300_c1'} / Tech. Dig. - Int. Electron Devices Meet.
10.1063/1.1831560 / Appl. Phys. Lett. (2004)
10.1063/1.1872217 / Appl. Phys. Lett. (2005)
{'volume': '2005', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'first-page': '769', 'key': '2023062217582196300_c4'} / Tech. Dig. - Int. Electron Devices Meet.
10.1063/1.112031 / Appl. Phys. Lett. (1994)
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10.1063/1.2150580 / Appl. Phys. Lett. (2005)
10.1063/1.2204649 / Appl. Phys. Lett. (2006)
{'key': '2023062217582196300_c9'}
10.1063/1.1430542 / J. Appl. Phys. (2002)
10.1103/PhysRevB.71.045305 / Phys. Rev. B (2005)

Dates

Type	When
Created	19 years, 2 months ago (June 19, 2006, 6:21 p.m.)
Deposited	2 years, 2 months ago (June 23, 2023, 12:29 a.m.)
Indexed	1 month ago (July 30, 2025, 6:47 a.m.)
Issued	19 years, 2 months ago (June 5, 2006)
Published	19 years, 2 months ago (June 5, 2006)
Published Online	19 years, 2 months ago (June 6, 2006)
Published Print	19 years, 2 months ago (June 5, 2006)

Funders 0

None

BibTeX

@article{Kim_2006, title={Improvement of resistive memory switching in NiO using IrO2}, volume={88}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2210087}, DOI={10.1063/1.2210087}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kim, D. C. and Lee, M. J. and Ahn, S. E. and Seo, S. and Park, J. C. and Yoo, I. K. and Baek, I. G. and Kim, H. J. and Yim, E. K. and Lee, J. E. and Park, S. O. and Kim, H. S. and Chung, U-In and Moon, J. T. and Ryu, B. I.}, year={2006}, month=jun }

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