DOI: 10.1063/1.2209886. Single-electron tunneling force spectroscopy of an individual electronic state in a nonconducting surface

Single-electron tunneling force spectroscopy of an individual electronic state in a nonconducting surface

10.1063/1.2209886

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A tunneling spectroscopy technique to measure the energy level of an electronic state in a completely nonconducting surface is demonstrated. Spectroscopy is performed by electrostatic force detection of single-electron tunneling between a scanning probe and the state as a function of an applied voltage. An electronic state near the surface of a SiO2 film is found 5.5±0.2eV below the conduction band edge. A random telegraph signal, caused by sporadic back-and-forth single-electron tunneling, is observed as the probe Fermi level passes through the state energy.

Bibliography

Bussmann, E., & Williams, C. C. (2006). Single-electron tunneling force spectroscopy of an individual electronic state in a nonconducting surface. Applied Physics Letters, 88(26).

Authors 2

E. Bussmann (first)
C. C. Williams (additional)

References 22 Referenced 31

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10.1103/PhysRevLett.60.2543 / Phys. Rev. Lett. (1988)
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Dates

Type	When
Created	19 years, 2 months ago (June 30, 2006, 9:46 p.m.)
Deposited	2 years, 2 months ago (June 23, 2023, 8:15 p.m.)
Indexed	4 weeks, 2 days ago (Aug. 6, 2025, 9:17 a.m.)
Issued	19 years, 2 months ago (June 26, 2006)
Published	19 years, 2 months ago (June 26, 2006)
Published Online	19 years, 2 months ago (June 28, 2006)
Published Print	19 years, 2 months ago (June 26, 2006)

Funders 0

None

BibTeX

@article{Bussmann_2006, title={Single-electron tunneling force spectroscopy of an individual electronic state in a nonconducting surface}, volume={88}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2209886}, DOI={10.1063/1.2209886}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bussmann, E. and Williams, C. C.}, year={2006}, month=jun }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        6
      ]
    ],
    "date-time": "2025-08-06T13:17:19Z",
    "timestamp": 1754486239196,
    "version": "3.41.2"
  },
  "reference-count": 22,
  "publisher": "AIP Publishing",
  "issue": "26",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2006,
        6,
        26
      ]
    ]
  },
  "abstract": "<jats:p>A tunneling spectroscopy technique to measure the energy level of an electronic state in a completely nonconducting surface is demonstrated. Spectroscopy is performed by electrostatic force detection of single-electron tunneling between a scanning probe and the state as a function of an applied voltage. An electronic state near the surface of a SiO2 film is found 5.5\u00b10.2eV below the conduction band edge. A random telegraph signal, caused by sporadic back-and-forth single-electron tunneling, is observed as the probe Fermi level passes through the state energy.</jats:p>",
  "DOI": "10.1063/1.2209886",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2006,
        7,
        1
      ]
    ],
    "date-time": "2006-07-01T01:46:54Z",
    "timestamp": 1151718414000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 31,
  "title": "Single-electron tunneling force spectroscopy of an individual electronic state in a nonconducting surface",
  "prefix": "10.1063",
  "volume": "88",
  "author": [
    {
      "given": "E.",
      "family": "Bussmann",
      "sequence": "first",
      "affiliation": [
        {
          "name": "University of Utah Department of Physics, , 115 South 1400 East Room 201, Salt Lake City, Utah 84112"
        }
      ]
    },
    {
      "given": "C. C.",
      "family": "Williams",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Utah Department of Physics, , 115 South 1400 East Room 201, Salt Lake City, Utah 84112"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2006,
        6,
        28
      ]
    ]
  },
  "reference": [
    {
      "volume-title": "Introduction to Scanning Tunneling Microscopy",
      "year": "1993",
      "key": "2023062117534593500_c1"
    },
    {
      "key": "2023062117534593500_c2",
      "doi-asserted-by": "publisher",
      "first-page": "2543",
      "DOI": "10.1103/PhysRevLett.60.2543",
      "volume": "60",
      "year": "1988",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2023062117534593500_c3",
      "doi-asserted-by": "publisher",
      "first-page": "493",
      "DOI": "10.1126/science.1099557",
      "volume": "305",
      "year": "2004",
      "journal-title": "Science"
    },
    {
      "key": "2023062117534593500_c4",
      "doi-asserted-by": "publisher",
      "first-page": "658",
      "DOI": "10.1038/nature03563",
      "volume": "435",
      "year": "2005",
      "journal-title": "Nature (London)"
    },
    {
      "key": "2023062117534593500_c5",
      "doi-asserted-by": "publisher",
      "first-page": "724",
      "DOI": "10.1063/1.96702",
      "volume": "48",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062117534593500_c6",
      "doi-asserted-by": "publisher",
      "first-page": "497",
      "DOI": "10.1063/1.1641159",
      "volume": "75",
      "year": "2004",
      "journal-title": "Rev. Sci. Instrum."
    },
    {
      "key": "2023062117534593500_c7",
      "doi-asserted-by": "publisher",
      "first-page": "1828",
      "DOI": "10.1063/1.1403256",
      "volume": "79",
      "year": "2001",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062117534593500_c8",
      "doi-asserted-by": "publisher",
      "first-page": "4589",
      "DOI": "10.1063/1.1525886",
      "volume": "81",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062117534593500_c9",
      "doi-asserted-by": "publisher",
      "first-page": "2538",
      "DOI": "10.1063/1.1795979",
      "volume": "85",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062117534593500_c10",
      "doi-asserted-by": "publisher",
      "first-page": "163109",
      "DOI": "10.1063/1.1897429",
      "volume": "86",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062117534593500_c11",
      "doi-asserted-by": "publisher",
      "first-page": "1098",
      "DOI": "10.1126/SCIENCE.1069923",
      "volume": "296",
      "year": "2002",
      "journal-title": "Science"
    },
    {
      "key": "2023062117534593500_c12",
      "doi-asserted-by": "publisher",
      "first-page": "056802",
      "DOI": "10.1103/PhysRevLett.94.056802",
      "volume": "94",
      "year": "2005",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2023062117534593500_c13",
      "doi-asserted-by": "publisher",
      "first-page": "S125",
      "DOI": "10.1088/0957-4484/16/3/023",
      "volume": "16",
      "year": "2005",
      "journal-title": "Nanotechnology"
    },
    {
      "key": "2023062117534593500_c14",
      "doi-asserted-by": "publisher",
      "first-page": "242102",
      "DOI": "10.1063/1.2139623",
      "volume": "87",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062117534593500_c15",
      "doi-asserted-by": "publisher",
      "first-page": "241405",
      "DOI": "10.1103/PhysRevB.66.241405",
      "volume": "66",
      "year": "2002",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023062117534593500_c16",
      "doi-asserted-by": "publisher",
      "first-page": "016108",
      "DOI": "10.1103/PhysRevLett.96.016108",
      "volume": "96",
      "year": "2006",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2023062117534593500_c17"
    },
    {
      "edition": "2nd ed.",
      "volume-title": "Physics of Semiconductor Devices",
      "year": "1981",
      "key": "2023062117534593500_c18"
    },
    {
      "key": "2023062117534593500_c19",
      "doi-asserted-by": "publisher",
      "first-page": "345",
      "DOI": "10.1116/1.1535173",
      "volume": "21",
      "year": "2003",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2023062117534593500_c20"
    },
    {
      "key": "2023062117534593500_c21",
      "doi-asserted-by": "publisher",
      "first-page": "228",
      "DOI": "10.1103/PhysRevLett.52.228",
      "volume": "52",
      "year": "1984",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2023062117534593500_c22",
      "doi-asserted-by": "publisher",
      "first-page": "226402",
      "DOI": "10.1103/PhysRevLett.91.226402",
      "volume": "91",
      "year": "2003",
      "journal-title": "Phys. Rev. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2209886/14355347/263108_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2209886/14355347/263108_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        6,
        24
      ]
    ],
    "date-time": "2023-06-24T00:15:12Z",
    "timestamp": 1687565712000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/88/26/263108/117992/Single-electron-tunneling-force-spectroscopy-of-an"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2006,
        6,
        26
      ]
    ]
  },
  "references-count": 22,
  "journal-issue": {
    "issue": "26",
    "published-print": {
      "date-parts": [
        [
          2006,
          6,
          26
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2209886",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2006,
        6,
        26
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2006,
        6,
        26
      ]
    ]
  },
  "article-number": "263108"
}