DOI: 10.1063/1.2208938. Influence of processing conditions on the stability of poly(3-hexylthiophene)-based field-effect transistors

Influence of processing conditions on the stability of poly(3-hexylthiophene)-based field-effect transistors

10.1063/1.2208938

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Bottom-contact organic field-effect transistors (OFETs) based on poly(3-hexylthiophene)-2,5-diyl were fabricated under different process conditions. The devices displayed drastic differences in their ambient-air stability. Whereas it took only about 10min in air for the off current to increase by one order of magnitude in OFETs prepared with chloroform and hexamethyldisilazane, a 120min exposure to air caused only a slight degradation of OFETs prepared using 1,2,4-trichlorobenzene, n-octadecyltrichlorosilane, and a heat treatment. The differences in the film surface morphology were analyzed and possible mechanisms for the enhanced stability are discussed.

Bibliography

Majewski, L. A., Kingsley, J. W., Balocco, C., & Song, A. M. (2006). Influence of processing conditions on the stability of poly(3-hexylthiophene)-based field-effect transistors. Applied Physics Letters, 88(22).

Authors 4

L. A. Majewski (first)
J. W. Kingsley (additional)
C. Balocco (additional)
A. M. Song (additional)

References 17 Referenced 86

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{'key': '2023070300455139100_c16', 'first-page': 'P6', 'volume': '725', 'year': '2002', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (2002)
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Dates

Type	When
Created	19 years, 2 months ago (May 31, 2006, 7:51 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 8:46 p.m.)
Indexed	1 month ago (July 30, 2025, 6:46 a.m.)
Issued	19 years, 3 months ago (May 29, 2006)
Published	19 years, 3 months ago (May 29, 2006)
Published Online	19 years, 3 months ago (May 31, 2006)
Published Print	19 years, 3 months ago (May 29, 2006)

Funders 0

None

BibTeX

@article{Majewski_2006, title={Influence of processing conditions on the stability of poly(3-hexylthiophene)-based field-effect transistors}, volume={88}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2208938}, DOI={10.1063/1.2208938}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Majewski, L. A. and Kingsley, J. W. and Balocco, C. and Song, A. M.}, year={2006}, month=may }

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