DOI: 10.1063/1.2200591. Nanoscale n-channel and ambipolar organic field-effect transistors

Nanoscale n-channel and ambipolar organic field-effect transistors

10.1063/1.2200591

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

N -channel and ambipolar organic field-effect transistors (OFETs) with a few tens of nanometer channel length were fabricated and characterized. N,N′-bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN2) was employed as the active semiconductor and yielded a linear regime electron mobility of 2.3×10−3cm2∕Vs at 5×105V∕cm in an OFET with channel length of 15nm. An ambipolar heterostructure transistor consisting of thin layers of PDI-8CN2 and pentacene was fabricated with channel length of about 23nm. Field-effect hole and electron mobilities of 9.2×10−3 and 4.0×10−3cm2∕Vs, respectively, are obtained at 5×105V∕cm. These results represent the shortest channel length n-channel and ambipolar organic transistors that have been fabricated.

Bibliography

Jung, T., Yoo, B., Wang, L., Dodabalapur, A., Jones, B. A., Facchetti, A., Wasielewski, M. R., & Marks, T. J. (2006). Nanoscale n-channel and ambipolar organic field-effect transistors. Applied Physics Letters, 88(18).

Authors 8

Taeho Jung (first)
Byungwook Yoo (additional)
Liang Wang (additional)
Ananth Dodabalapur (additional)
Brooks A. Jones (additional)
Antonio Facchetti (additional)
Michael R. Wasielewski (additional)
Tobin J. Marks (additional)

References 19 Referenced 40

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Dates

Type	When
Created	19 years, 4 months ago (April 28, 2006, 6:12 p.m.)
Deposited	2 years, 2 months ago (July 2, 2023, 10:38 p.m.)
Indexed	4 days, 6 hours ago (Sept. 2, 2025, 6:38 a.m.)
Issued	19 years, 4 months ago (May 1, 2006)
Published	19 years, 4 months ago (May 1, 2006)
Published Online	19 years, 4 months ago (May 1, 2006)
Published Print	19 years, 4 months ago (May 1, 2006)

Funders 0

None

BibTeX

@article{Jung_2006, title={Nanoscale n-channel and ambipolar organic field-effect transistors}, volume={88}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2200591}, DOI={10.1063/1.2200591}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Jung, Taeho and Yoo, Byungwook and Wang, Liang and Dodabalapur, Ananth and Jones, Brooks A. and Facchetti, Antonio and Wasielewski, Michael R. and Marks, Tobin J.}, year={2006}, month=may }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        9,
        2
      ]
    ],
    "date-time": "2025-09-02T10:38:29Z",
    "timestamp": 1756809509960,
    "version": "3.41.2"
  },
  "reference-count": 19,
  "publisher": "AIP Publishing",
  "issue": "18",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2006,
        5,
        1
      ]
    ]
  },
  "abstract": "<jats:p>N -channel and ambipolar organic field-effect transistors (OFETs) with a few tens of nanometer channel length were fabricated and characterized. N,N\u2032-bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN2) was employed as the active semiconductor and yielded a linear regime electron mobility of 2.3\u00d710\u22123cm2\u2215Vs at 5\u00d7105V\u2215cm in an OFET with channel length of 15nm. An ambipolar heterostructure transistor consisting of thin layers of PDI-8CN2 and pentacene was fabricated with channel length of about 23nm. Field-effect hole and electron mobilities of 9.2\u00d710\u22123 and 4.0\u00d710\u22123cm2\u2215Vs, respectively, are obtained at 5\u00d7105V\u2215cm. These results represent the shortest channel length n-channel and ambipolar organic transistors that have been fabricated.</jats:p>",
  "DOI": "10.1063/1.2200591",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2006,
        4,
        28
      ]
    ],
    "date-time": "2006-04-28T22:12:23Z",
    "timestamp": 1146262343000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 40,
  "title": "Nanoscale n-channel and ambipolar organic field-effect transistors",
  "prefix": "10.1063",
  "volume": "88",
  "author": [
    {
      "given": "Taeho",
      "family": "Jung",
      "sequence": "first",
      "affiliation": [
        {
          "name": "The University of Texas at Austin Microelectronics Research Center, , 10100 Burnet Road, Building 160, Austin, Texas 78758"
        }
      ]
    },
    {
      "given": "Byungwook",
      "family": "Yoo",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "The University of Texas at Austin Microelectronics Research Center, , 10100 Burnet Road, Building 160, Austin, Texas 78758"
        }
      ]
    },
    {
      "given": "Liang",
      "family": "Wang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "The University of Texas at Austin Microelectronics Research Center, , 10100 Burnet Road, Building 160, Austin, Texas 78758"
        }
      ]
    },
    {
      "given": "Ananth",
      "family": "Dodabalapur",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "The University of Texas at Austin Microelectronics Research Center, , 10100 Burnet Road, Building 160, Austin, Texas 78758"
        }
      ]
    },
    {
      "given": "Brooks A.",
      "family": "Jones",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Northwestern University Center for Nanofabrication and Molecular Self-Assembly, , 2145 Sheridan Road, Evanston, Illinois 60208-3113"
        }
      ]
    },
    {
      "given": "Antonio",
      "family": "Facchetti",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Northwestern University Center for Nanofabrication and Molecular Self-Assembly, , 2145 Sheridan Road, Evanston, Illinois 60208-3113"
        }
      ]
    },
    {
      "given": "Michael R.",
      "family": "Wasielewski",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Northwestern University Center for Nanofabrication and Molecular Self-Assembly, , 2145 Sheridan Road, Evanston, Illinois 60208-3113"
        }
      ]
    },
    {
      "given": "Tobin J.",
      "family": "Marks",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Northwestern University Center for Nanofabrication and Molecular Self-Assembly, , 2145 Sheridan Road, Evanston, Illinois 60208-3113"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2006,
        5,
        1
      ]
    ]
  },
  "reference": [
    {
      "key": "2023070302382967800_c1",
      "doi-asserted-by": "publisher",
      "first-page": "13859",
      "DOI": "10.1021/ja0489846",
      "volume": "126",
      "year": "2004",
      "journal-title": "J. Am. Chem. Soc."
    },
    {
      "key": "2023070302382967800_c2",
      "doi-asserted-by": "publisher",
      "first-page": "1299",
      "DOI": "10.1021/cm9701163",
      "volume": "9",
      "year": "1997",
      "journal-title": "Chem. Mater."
    },
    {
      "key": "2023070302382967800_c3",
      "doi-asserted-by": "publisher",
      "first-page": "4436",
      "DOI": "10.1021/cm049391x",
      "volume": "16",
      "year": "2004",
      "journal-title": "Chem. Mater."
    },
    {
      "key": "2023070302382967800_c4",
      "doi-asserted-by": "publisher",
      "first-page": "478",
      "DOI": "10.1038/35006603",
      "volume": "404",
      "year": "2000",
      "journal-title": "Nature (London)"
    },
    {
      "key": "2023070302382967800_c5",
      "doi-asserted-by": "publisher",
      "first-page": "6363",
      "DOI": "10.1002/anie.200461324",
      "volume": "43",
      "year": "2004",
      "journal-title": "Angew. Chem., Int. Ed."
    },
    {
      "key": "2023070302382967800_c6",
      "doi-asserted-by": "publisher",
      "first-page": "1348",
      "DOI": "10.1021/ja045124g",
      "volume": "127",
      "year": "2005",
      "journal-title": "J. Am. Chem. Soc."
    },
    {
      "key": "2023070302382967800_c7",
      "doi-asserted-by": "publisher",
      "first-page": "052104",
      "DOI": "10.1063/1.1861115",
      "volume": "86",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070302382967800_c8",
      "doi-asserted-by": "publisher",
      "first-page": "4765",
      "DOI": "10.1063/1.1818336",
      "volume": "85",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070302382967800_c9",
      "doi-asserted-by": "publisher",
      "first-page": "1108",
      "DOI": "10.1063/1.115728",
      "volume": "68",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "volume-title": "Physics of Semiconductor Devices",
      "year": "1982",
      "key": "2023070302382967800_c10"
    },
    {
      "key": "2023070302382967800_c11",
      "doi-asserted-by": "publisher",
      "first-page": "19281",
      "DOI": "10.1021/jp046246y",
      "volume": "108",
      "year": "2004",
      "journal-title": "J. Phys. Chem. B"
    },
    {
      "key": "2023070302382967800_c12",
      "doi-asserted-by": "publisher",
      "first-page": "063504",
      "DOI": "10.1063/1.1863434",
      "volume": "86",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070302382967800_c13",
      "doi-asserted-by": "publisher",
      "first-page": "082104",
      "DOI": "10.1063/1.2177627",
      "volume": "88",
      "year": "2006",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070302382967800_c14",
      "doi-asserted-by": "publisher",
      "first-page": "1772",
      "DOI": "10.1063/1.1790033",
      "volume": "85",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070302382967800_c15",
      "doi-asserted-by": "publisher",
      "first-page": "732",
      "DOI": "10.1002/adma.200306244",
      "volume": "16",
      "year": "2004",
      "journal-title": "Adv. Mater. (Weinheim, Ger.)"
    },
    {
      "key": "2023070302382967800_c16",
      "doi-asserted-by": "crossref",
      "first-page": "2684",
      "DOI": "10.1021/cm034140u",
      "volume": "15",
      "year": "2003",
      "journal-title": "Chem. Mater."
    },
    {
      "key": "2023070302382967800_c17",
      "doi-asserted-by": "crossref",
      "first-page": "270",
      "DOI": "10.1126/science.268.5208.270",
      "volume": "268",
      "year": "1995",
      "journal-title": "Science"
    },
    {
      "key": "2023070302382967800_c18",
      "doi-asserted-by": "crossref",
      "first-page": "1560",
      "DOI": "10.1126/science.269.5230.1560",
      "volume": "269",
      "year": "1995",
      "journal-title": "Science"
    },
    {
      "key": "2023070302382967800_c19",
      "doi-asserted-by": "publisher",
      "first-page": "093507",
      "DOI": "10.1063/1.2037204",
      "volume": "87",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2200591/14658578/183102_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2200591/14658578/183102_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        3
      ]
    ],
    "date-time": "2023-07-03T02:38:36Z",
    "timestamp": 1688351916000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/88/18/183102/331123/Nanoscale-n-channel-and-ambipolar-organic-field"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2006,
        5,
        1
      ]
    ]
  },
  "references-count": 19,
  "journal-issue": {
    "issue": "18",
    "published-print": {
      "date-parts": [
        [
          2006,
          5,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2200591",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2006,
        5,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2006,
        5,
        1
      ]
    ]
  },
  "article-number": "183102"
}