DOI: 10.1063/1.2199612. Electronic transport characteristics through individual ZnSnO3 nanowires

Electronic transport characteristics through individual ZnSnO3 nanowires

10.1063/1.2199612

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Composite ZnSnO3 nanowires are synthesized via a one-step thermal evaporation method. The nanowires are of core-shell structures with the presence of grain boundary and out-of-phase boundaries. Transport through individual nanowires shows nonlinear current-voltage (I-V) characteristics in the range of the voltage from −3to3V. Such a behavior can be attributed to the presence of the barrier at the grain boundary, and the effective barrier height is estimated to be about 0.22eV by analyzing the I-V curves at various temperatures. The current at −3V jumps from 0.12to6.0μA within 30s at 300K as exposed to UV illumination. Such jump can be well explained in terms of effective barrier height and depletion width.

Bibliography

Xue, X. Y., Chen, Y. J., Li, Q. H., Wang, C., Wang, Y. G., & Wang, T. H. (2006). Electronic transport characteristics through individual ZnSnO3 nanowires. Applied Physics Letters, 88(18).

Authors 6

X. Y. Xue (first)
Y. J. Chen (additional)
Q. H. Li (additional)
C. Wang (additional)
Y. G. Wang (additional)
T. H. Wang (additional)

References 22 Referenced 46

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Dates

Type	When
Created	19 years, 3 months ago (May 2, 2006, 6:45 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 11:03 p.m.)
Indexed	4 weeks, 2 days ago (July 30, 2025, 6:47 a.m.)
Issued	19 years, 3 months ago (May 1, 2006)
Published	19 years, 3 months ago (May 1, 2006)
Published Online	19 years, 3 months ago (May 3, 2006)
Published Print	19 years, 3 months ago (May 1, 2006)

Funders 0

None

BibTeX

@article{Xue_2006, title={Electronic transport characteristics through individual ZnSnO3 nanowires}, volume={88}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2199612}, DOI={10.1063/1.2199612}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Xue, X. Y. and Chen, Y. J. and Li, Q. H. and Wang, C. and Wang, Y. G. and Wang, T. H.}, year={2006}, month=may }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:47:27Z",
    "timestamp": 1753872447734,
    "version": "3.41.2"
  },
  "reference-count": 22,
  "publisher": "AIP Publishing",
  "issue": "18",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2006,
        5,
        1
      ]
    ]
  },
  "abstract": "<jats:p>Composite ZnSnO3 nanowires are synthesized via a one-step thermal evaporation method. The nanowires are of core-shell structures with the presence of grain boundary and out-of-phase boundaries. Transport through individual nanowires shows nonlinear current-voltage (I-V) characteristics in the range of the voltage from \u22123to3V. Such a behavior can be attributed to the presence of the barrier at the grain boundary, and the effective barrier height is estimated to be about 0.22eV by analyzing the I-V curves at various temperatures. The current at \u22123V jumps from 0.12to6.0\u03bcA within 30s at 300K as exposed to UV illumination. Such jump can be well explained in terms of effective barrier height and depletion width.</jats:p>",
  "DOI": "10.1063/1.2199612",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2006,
        5,
        2
      ]
    ],
    "date-time": "2006-05-02T22:45:04Z",
    "timestamp": 1146609904000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 46,
  "title": "Electronic transport characteristics through individual ZnSnO3 nanowires",
  "prefix": "10.1063",
  "volume": "88",
  "author": [
    {
      "given": "X. Y.",
      "family": "Xue",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Micro-Nano Technologies Research Center, Hunan University , Changsha 410082, , Beijing 100080, China and , Harbin 150001, China"
        },
        {
          "name": "Institute of Physics, Chinese Academy of Sciences , Changsha 410082, , Beijing 100080, China and , Harbin 150001, China"
        },
        {
          "name": "School of Science, Harbin Engineering University , Changsha 410082, , Beijing 100080, China and , Harbin 150001, China"
        }
      ]
    },
    {
      "given": "Y. J.",
      "family": "Chen",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Micro-Nano Technologies Research Center, Hunan University , Changsha 410082, , Beijing 100080, China and , Harbin 150001, China"
        },
        {
          "name": "Institute of Physics, Chinese Academy of Sciences , Changsha 410082, , Beijing 100080, China and , Harbin 150001, China"
        },
        {
          "name": "School of Science, Harbin Engineering University , Changsha 410082, , Beijing 100080, China and , Harbin 150001, China"
        }
      ]
    },
    {
      "given": "Q. H.",
      "family": "Li",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Micro-Nano Technologies Research Center, Hunan University , Changsha 410082, , Beijing 100080, China and , Harbin 150001, China"
        },
        {
          "name": "Institute of Physics, Chinese Academy of Sciences , Changsha 410082, , Beijing 100080, China and , Harbin 150001, China"
        },
        {
          "name": "School of Science, Harbin Engineering University , Changsha 410082, , Beijing 100080, China and , Harbin 150001, China"
        }
      ]
    },
    {
      "given": "C.",
      "family": "Wang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Micro-Nano Technologies Research Center, Hunan University , Changsha 410082, , Beijing 100080, China and , Harbin 150001, China"
        },
        {
          "name": "Institute of Physics, Chinese Academy of Sciences , Changsha 410082, , Beijing 100080, China and , Harbin 150001, China"
        },
        {
          "name": "School of Science, Harbin Engineering University , Changsha 410082, , Beijing 100080, China and , Harbin 150001, China"
        }
      ]
    },
    {
      "given": "Y. G.",
      "family": "Wang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Micro-Nano Technologies Research Center, Hunan University , Changsha 410082, , Beijing 100080, China and , Harbin 150001, China"
        },
        {
          "name": "Institute of Physics, Chinese Academy of Sciences , Changsha 410082, , Beijing 100080, China and , Harbin 150001, China"
        },
        {
          "name": "School of Science, Harbin Engineering University , Changsha 410082, , Beijing 100080, China and , Harbin 150001, China"
        }
      ]
    },
    {
      "given": "T. H.",
      "family": "Wang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Micro-Nano Technologies Research Center, Hunan University , Changsha 410082, , Beijing 100080, China and , Harbin 150001, China"
        },
        {
          "name": "Institute of Physics, Chinese Academy of Sciences , Changsha 410082, , Beijing 100080, China and , Harbin 150001, China"
        },
        {
          "name": "School of Science, Harbin Engineering University , Changsha 410082, , Beijing 100080, China and , Harbin 150001, China"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2006,
        5,
        3
      ]
    ]
  },
  "reference": [
    {
      "key": "2023070303033109100_c1",
      "doi-asserted-by": "publisher",
      "first-page": "1947",
      "DOI": "10.1126/science.1058120",
      "volume": "291",
      "year": "2001",
      "journal-title": "Science"
    },
    {
      "key": "2023070303033109100_c2",
      "doi-asserted-by": "publisher",
      "first-page": "3367",
      "DOI": "10.1063/1.1702134",
      "volume": "84",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070303033109100_c3",
      "doi-asserted-by": "publisher",
      "first-page": "6389",
      "DOI": "10.1063/1.1840116",
      "volume": "85",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070303033109100_c4",
      "doi-asserted-by": "publisher",
      "first-page": "4556",
      "DOI": "10.1063/1.1759071",
      "volume": "84",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070303033109100_c5",
      "doi-asserted-by": "publisher",
      "first-page": "5682",
      "DOI": "10.1063/1.1833557",
      "volume": "85",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070303033109100_c6",
      "doi-asserted-by": "publisher",
      "first-page": "3085",
      "DOI": "10.1063/1.1707225",
      "volume": "84",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070303033109100_c7",
      "doi-asserted-by": "publisher",
      "first-page": "172505",
      "DOI": "10.1063/1.2084321",
      "volume": "87",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070303033109100_c8",
      "doi-asserted-by": "publisher",
      "first-page": "1058",
      "DOI": "10.1063/1.1447312",
      "volume": "80",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070303033109100_c9",
      "doi-asserted-by": "publisher",
      "first-page": "3107",
      "DOI": "10.1063/1.1802372",
      "volume": "85",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070303033109100_c10",
      "doi-asserted-by": "publisher",
      "first-page": "3612",
      "DOI": "10.1063/1.1738180",
      "volume": "84",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070303033109100_c11",
      "doi-asserted-by": "publisher",
      "first-page": "233101",
      "DOI": "10.1063/1.1944204",
      "volume": "86",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070303033109100_c12",
      "doi-asserted-by": "publisher",
      "first-page": "12653",
      "DOI": "10.1021/jp0265485",
      "volume": "106",
      "year": "2002",
      "journal-title": "J. Phys. Chem. B"
    },
    {
      "key": "2023070303033109100_c13",
      "doi-asserted-by": "publisher",
      "first-page": "435",
      "DOI": "10.1016/j.ssc.2004.06.009",
      "volume": "131",
      "year": "2004",
      "journal-title": "Solid State Commun."
    },
    {
      "key": "2023070303033109100_c14",
      "doi-asserted-by": "publisher",
      "first-page": "8249",
      "DOI": "10.1021/jp049230g",
      "volume": "108",
      "year": "2004",
      "journal-title": "J. Phys. Chem. B"
    },
    {
      "key": "2023070303033109100_c15",
      "doi-asserted-by": "publisher",
      "first-page": "327",
      "DOI": "10.1016/S0167-2738(97)00507-9",
      "volume": "109",
      "year": "1998",
      "journal-title": "Solid State Ionics"
    },
    {
      "key": "2023070303033109100_c16",
      "doi-asserted-by": "publisher",
      "first-page": "21",
      "DOI": "10.1016/S0925-4005(01)00884-X",
      "volume": "80",
      "year": "2001",
      "journal-title": "Sens. Actuators B"
    },
    {
      "key": "2023070303033109100_c17",
      "doi-asserted-by": "publisher",
      "first-page": "5",
      "DOI": "10.1016/0925-4005(93)85003-S",
      "volume": "12",
      "year": "1993",
      "journal-title": "Sens. Actuators B"
    },
    {
      "key": "2023070303033109100_c18",
      "doi-asserted-by": "publisher",
      "first-page": "298",
      "DOI": "10.1002/(SICI)1521-4095(200002)12:4&lt;298::AID-ADMA298&gt;3.0.CO;2-Y",
      "volume": "12",
      "year": "2000",
      "journal-title": "Adv. Mater. (Weinheim, Ger.)"
    },
    {
      "key": "2023070303033109100_c19",
      "doi-asserted-by": "publisher",
      "first-page": "3564",
      "DOI": "10.1021/cm0201697",
      "volume": "14",
      "year": "2002",
      "journal-title": "Chem. Mater."
    },
    {
      "key": "2023070303033109100_c20",
      "doi-asserted-by": "crossref",
      "first-page": "615",
      "DOI": "10.1007/s003390100808",
      "volume": "73",
      "year": "2001",
      "journal-title": "Appl. Phys. A: Mater. Sci. Process."
    },
    {
      "key": "2023070303033109100_c21",
      "doi-asserted-by": "publisher",
      "first-page": "2844",
      "DOI": "10.1063/1.335221",
      "volume": "57",
      "year": "1985",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070303033109100_c22",
      "doi-asserted-by": "crossref",
      "first-page": "130",
      "DOI": "10.1016/j.jcrysgro.2003.08.012",
      "volume": "260",
      "year": "2004",
      "journal-title": "J. Cryst. Growth"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2199612/14657555/182102_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2199612/14657555/182102_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        3
      ]
    ],
    "date-time": "2023-07-03T03:03:43Z",
    "timestamp": 1688353423000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/88/18/182102/331700/Electronic-transport-characteristics-through"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2006,
        5,
        1
      ]
    ]
  },
  "references-count": 22,
  "journal-issue": {
    "issue": "18",
    "published-print": {
      "date-parts": [
        [
          2006,
          5,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2199612",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2006,
        5,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2006,
        5,
        1
      ]
    ]
  },
  "article-number": "182102"
}