Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We show that polarity-dependent, nonvolatile resistance switching by electric field occurs in the thin film of various transition-metal oxides in almost the same manner. This result indicates that, contrary to the general acceptance, perovskite manganite is by no means a special compound for this phenomenon. It is also suggested that the resistance switching is not dominated by a detailed electronic structure of each sample, but dominated by a more general origin, e.g., crystalline defect.

Bibliography

Hamaguchi, M., Aoyama, K., Asanuma, S., Uesu, Y., & Katsufuji, T. (2006). Electric-field-induced resistance switching universally observed in transition-metal-oxide thin films. Applied Physics Letters, 88(14).

Authors 5
  1. M. Hamaguchi (first)
  2. K. Aoyama (additional)
  3. S. Asanuma (additional)
  4. Y. Uesu (additional)
  5. T. Katsufuji (additional)
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Dates
Type When
Created 19 years, 4 months ago (April 6, 2006, 9:49 a.m.)
Deposited 2 years, 1 month ago (July 2, 2023, 8:23 p.m.)
Indexed 1 week ago (Aug. 23, 2025, 9:31 p.m.)
Issued 19 years, 4 months ago (April 3, 2006)
Published 19 years, 4 months ago (April 3, 2006)
Published Online 19 years, 4 months ago (April 6, 2006)
Published Print 19 years, 4 months ago (April 3, 2006)
Funders 0

None

@article{Hamaguchi_2006, title={Electric-field-induced resistance switching universally observed in transition-metal-oxide thin films}, volume={88}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2193328}, DOI={10.1063/1.2193328}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hamaguchi, M. and Aoyama, K. and Asanuma, S. and Uesu, Y. and Katsufuji, T.}, year={2006}, month=apr }