Abstract
We show that polarity-dependent, nonvolatile resistance switching by electric field occurs in the thin film of various transition-metal oxides in almost the same manner. This result indicates that, contrary to the general acceptance, perovskite manganite is by no means a special compound for this phenomenon. It is also suggested that the resistance switching is not dominated by a detailed electronic structure of each sample, but dominated by a more general origin, e.g., crystalline defect.
References
15
Referenced
88
10.1063/1.126464
/ Appl. Phys. Lett. (2000)10.1063/1.126902
/ Appl. Phys. Lett. (2000)10.1063/1.1377617
/ Appl. Phys. Lett. (2000)10.1063/1.1590741
/ Appl. Phys. Lett. (2003)10.1063/1.1768305
/ Appl. Phys. Lett. (2004)10.1063/1.1782268
/ Appl. Phys. Lett. (2004)10.1063/1.1812580
/ Appl. Phys. Lett. (2004)10.1063/1.328036
/ J. Appl. Phys. (1980)10.1063/1.1872217
/ Appl. Phys. Lett. (2005)10.1103/PhysRevLett.92.178302
/ Phys. Rev. Lett. (2004)10.1063/1.1481767
/ Appl. Phys. Lett. (2002)10.1103/PhysRevB.71.035108
/ Phys. Rev. B (2005)10.1063/1.364580
/ J. Appl. Phys. (1997)10.1063/1.1436523
/ Appl. Phys. Lett. (2002)10.1016/S0921-4534(96)00507-2
/ Physica C (1996)
Dates
Type | When |
---|---|
Created | 19 years, 4 months ago (April 6, 2006, 9:49 a.m.) |
Deposited | 2 years, 1 month ago (July 2, 2023, 8:23 p.m.) |
Indexed | 1 week ago (Aug. 23, 2025, 9:31 p.m.) |
Issued | 19 years, 4 months ago (April 3, 2006) |
Published | 19 years, 4 months ago (April 3, 2006) |
Published Online | 19 years, 4 months ago (April 6, 2006) |
Published Print | 19 years, 4 months ago (April 3, 2006) |
@article{Hamaguchi_2006, title={Electric-field-induced resistance switching universally observed in transition-metal-oxide thin films}, volume={88}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2193328}, DOI={10.1063/1.2193328}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hamaguchi, M. and Aoyama, K. and Asanuma, S. and Uesu, Y. and Katsufuji, T.}, year={2006}, month=apr }