DOI: 10.1063/1.2192576. Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices

Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices

10.1063/1.2192576

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have studied the thermal stability of HfO2 thin layers on germanium and the substrate interface development. HfO2 was deposited on Ge substrates and annealed in O2 or N2 at 500°C (substrate temperature). After O2 anneal, we observed the formation of hafnium germanate, which is stable at 500°C in N2 as opposed to GeO2 that desorbs as GeO. We believe that this hafnium germanate is an oxygen barrier and as such is at the origin of the much thinner interface between HfO2 and germanium as compared to silicon. In addition, results suggest that the HfGeOx is related to the high interface state density frequently reported for germanium metal oxide semiconductor devices.

Bibliography

Van Elshocht, S., Caymax, M., Conard, T., De Gendt, S., Hoflijk, I., Houssa, M., De Jaeger, B., Van Steenbergen, J., Heyns, M., & Meuris, M. (2006). Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices. Applied Physics Letters, 88(14).

Authors 10

S. Van Elshocht (first)
M. Caymax (additional)
T. Conard (additional)
S. De Gendt (additional)
I. Hoflijk (additional)
M. Houssa (additional)
B. De Jaeger (additional)
J. Van Steenbergen (additional)
M. Heyns (additional)
M. Meuris (additional)

References 14 Referenced 66

{'volume': '38', 'journal-title': 'Electronics', 'year': '1965', 'key': '2023070221463359000_c1'} / Electronics (1965)
10.1016/0039-6028(94)00746-2 / Surf. Sci. (1995)
10.1016/S0039-6028(99)00866-3 / Surf. Sci. (1999)
10.1016/0039-6028(94)00509-5 / Surf. Sci. (1994)
10.1016/0039-6028(91)90655-C / Surf. Sci. (1991)
{'volume': '2002', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'first-page': '437', 'key': '2023070221463359000_c6'} / Tech. Dig. - Int. Electron Devices Meet.
{'first-page': '189', 'volume-title': '34th European Solid-State Device Research Conference', 'year': '2004', 'key': '2023070221463359000_c7'} / 34th European Solid-State Device Research Conference (2004)
10.1149/1.1648027 / J. Electrochem. Soc. (2004)
10.1063/1.1505120 / Appl. Phys. Lett. (2002)
10.1116/1.579313 / J. Vac. Sci. Technol. A (1994)
10.1063/1.1810642 / Appl. Phys. Lett. (2004)
10.1063/1.1767607 / Appl. Phys. Lett. (2004)
10.1016/j.mee.2005.04.047 / Microelectron. Eng. (2005)
10.1109/LED.2004.833842 / IEEE Electron Device Lett. (2004)

Dates

Type	When
Created	19 years, 5 months ago (April 3, 2006, 6:04 p.m.)
Deposited	2 years, 2 months ago (July 2, 2023, 5:46 p.m.)
Indexed	1 month ago (July 30, 2025, 6:47 a.m.)
Issued	19 years, 5 months ago (April 3, 2006)
Published	19 years, 5 months ago (April 3, 2006)
Published Online	19 years, 5 months ago (April 4, 2006)
Published Print	19 years, 5 months ago (April 3, 2006)

Funders 0

None

BibTeX

@article{Van_Elshocht_2006, title={Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices}, volume={88}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2192576}, DOI={10.1063/1.2192576}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Van Elshocht, S. and Caymax, M. and Conard, T. and De Gendt, S. and Hoflijk, I. and Houssa, M. and De Jaeger, B. and Van Steenbergen, J. and Heyns, M. and Meuris, M.}, year={2006}, month=apr }

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