Abstract
The in-plane magnetic anisotropy of (001) oriented InMnAs epitaxial films grown on InAs and GaSb were measured by magnetometry and the longitudinal magneto-optic Kerr effect. InMnAs epitaxial layers when grown on InAs exhibit a significant in-plane uniaxial anisotropy field of −0.66kG at room temperature. The uniaxial magnetic anisotropy is attributed to differences in Mn atomic density along the [110] and [1¯10] directions, resulting from the uniaxial surface symmetry of the InAs (001) surface. The asymmetry of the Mn density is preserved in InMnAs films grown on InAs by a two-dimensional growth mechanism. However, disorder as evidenced by increasing surface pitting perturbs the growth from an ideal layer-by-layer mechanism. This results in a decrease in the magnitude of the uniaxial anisotropy field with increasing thickness between 320–630nm. In contrast, InMnAs films grown on GaSb are magnetically isotropic for a thickness range of 50–420nm. The isotropic behavior is attributed to three-dimensional island growth of films grown on GaSb that eliminates long range order.
References
18
Referenced
10
10.1016/S0038-1098(01)00111-9
/ Solid State Commun. (2001)10.1126/science.284.5412.330
/ Science (1999)10.1063/1.102730
/ Appl. Phys. Lett. (1990)10.1016/S0022-0248(03)01569-0
/ J. Cryst. Growth (2003)10.1016/S0169-4332(03)00873-0
/ Appl. Surf. Sci. (2004){'volume-title': 'The Physical Principles of Magnetism', 'year': '2001', 'key': '2023070101291209000_c6'}
/ The Physical Principles of Magnetism (2001)10.1063/1.1773618
/ Appl. Phys. Lett. (2004)10.1063/1.1885190
/ Appl. Phys. Lett. (2005)10.1103/PhysRevLett.90.167206
/ Phys. Rev. Lett. (2003)10.1063/1.337886
/ J. Appl. Phys. (1987)10.1103/PhysRevB.56.8163
/ Phys. Rev. B (1997)10.1063/1.1771801
/ Appl. Phys. Lett. (2004)10.1063/1.1456391
/ J. Appl. Phys. (2002)10.1007/s11664-001-0192-y
/ J. Electron. Mater. (2001)10.1063/1.1150496
/ Rev. Sci. Instrum. (2000)10.1016/j.physb.2003.09.210
/ Physica B (2003)10.1063/1.342243
/ J. Appl. Phys. (1988)10.1103/PhysRevB.62.1167
/ Phys. Rev. B (2000)
Dates
Type | When |
---|---|
Created | 19 years, 2 months ago (June 12, 2006, 12:13 p.m.) |
Deposited | 2 years, 2 months ago (June 30, 2023, 9:29 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:47 a.m.) |
Issued | 19 years, 4 months ago (April 15, 2006) |
Published | 19 years, 4 months ago (April 15, 2006) |
Published Online | 19 years, 4 months ago (May 1, 2006) |
Published Print | 19 years, 4 months ago (April 15, 2006) |
@article{Chiu_2006, title={Origin of uniaxial magnetic anisotropy in epitaxial InMnAs thin films}, volume={99}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.2189967}, DOI={10.1063/1.2189967}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Chiu, P. T. and May, S. J. and Wessels, B. W.}, year={2006}, month=apr }