Abstract
The influence of postgrowth annealing on the structural and optical properties of rf cosputtered Mn doped ZnO thin films deposited on glass substrate at room temperature has been investigated. All as deposited Zn1−xMnxO films are highly textured, with the c axis of the wurtzite structure along the growth direction. The as grown films are in a state of compressive stress and a reduction in stress with postgrowth annealing treatment are observed. The band gap of Mn doped ZnO films (3.34eV) is slightly larger than the pure ZnO film (3.30eV) and is found to decrease with an increase in annealing temperature for all the samples. The optical dispersion of refractive index with photon energy in Zn1−xMnxO films with varying x and different annealing temperature is studied in the light of single oscillator and Pikhtin-Yas’kov [Sov. Phys. Semicond. 15, 81 (1981)] model, respectively.
References
26
Referenced
82
10.1063/1.125503
/ Appl. Phys. Lett. (1999)10.1063/1.1609250
/ Appl. Phys. Lett. (2003)10.1063/1.121384
/ Appl. Phys. Lett. (1998)10.1063/1.341700
/ J. Appl. Phys. (1988)10.1126/science.287.5455.1019
/ Science (2000)10.1103/PhysRevB.63.195205
/ Phys. Rev. B (2001)10.1063/1.1487927
/ Appl. Phys. Lett. (2002)10.1063/1.1690111
/ Appl. Phys. Lett. (2004)10.1063/1.1897827
/ Appl. Phys. Lett. (2005)10.1063/1.1348323
/ Appl. Phys. Lett. (2001)10.1063/1.1632547
/ J. Appl. Phys. (2004)10.1088/0953-8984/17/27/R01
/ J. Phys.: Condens. Matter (2005)10.1063/1.1856225
/ J. Appl. Phys. (2005)10.1063/1.125353
/ Appl. Phys. Lett. (1999){'key': '2023063019115369500_c14'}
10.1116/1.571933
/ J. Vac. Sci. Technol. A (1983)10.1116/1.571350
/ J. Vac. Sci. Technol. (1982)10.1063/1.354091
/ J. Appl. Phys. (1993)10.1063/1.1402142
/ J. Appl. Phys. (2001)10.1063/1.362842
/ J. Appl. Phys. (1996){'key': '2023063019115369500_c20', 'first-page': '201', 'volume': '395', 'year': '1997', 'journal-title': 'Thin Solid Films'}
/ Thin Solid Films (1997)10.1088/0022-3735/17/10/023
/ J. Phys. E (1984)10.1063/1.1774267
/ J. Appl. Phys. (2004)10.1016/0040-6090(84)90375-4
/ Thin Solid Films (1984)10.1103/PhysRevB.3.1338
/ Phys. Rev. B (1971){'key': '2023063019115369500_c25', 'first-page': '81', 'volume': '15', 'year': '1981', 'journal-title': 'Sov. Phys. Semicond.'}
/ Sov. Phys. Semicond. (1981)
Dates
Type | When |
---|---|
Created | 19 years, 2 months ago (June 12, 2006, 12:13 p.m.) |
Deposited | 2 years, 1 month ago (June 30, 2023, 3:12 p.m.) |
Indexed | 3 weeks, 5 days ago (July 30, 2025, 6:46 a.m.) |
Issued | 19 years, 4 months ago (April 15, 2006) |
Published | 19 years, 4 months ago (April 15, 2006) |
Published Online | 19 years, 3 months ago (April 27, 2006) |
Published Print | 19 years, 4 months ago (April 15, 2006) |
@article{Yadav_2006, title={Influence of postdeposition annealing on the structural and optical properties of cosputtered Mn doped ZnO thin films}, volume={99}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.2188083}, DOI={10.1063/1.2188083}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Yadav, Harish Kumar and Sreenivas, K. and Gupta, Vinay}, year={2006}, month=apr }