DOI: 10.1063/1.2179373. Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3

Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3

10.1063/1.2179373

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Epitaxial films of a deep-ultraviolet transparent oxide semiconductor, Ga2O3, were fabricated on α-Al2O3 (0001) substrates by pulsed laser deposition. Four-axes x-ray diffraction measurements revealed that the tin-doped Ga2O3 films have a crystal structure different from any known polymorphs of Ga2O3. Its crystal lattice was determined to be an orthorhombic. Top gate field-effect transistor structures were fabricated using the Ga2O3 epitaxial films for n-channels. The channel conductance was modulated by an order of magnitude by gate voltage at room temperature with an estimated field-effect mobility of 5×10−2cm2(Vs)−1.

Bibliography

Matsuzaki, K., Yanagi, H., Kamiya, T., Hiramatsu, H., Nomura, K., Hirano, M., & Hosono, H. (2006). Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3. Applied Physics Letters, 88(9).

Authors 7

Kosuke Matsuzaki (first)
Hiroshi Yanagi (additional)
Toshio Kamiya (additional)
Hidenori Hiramatsu (additional)
Kenji Nomura (additional)
Masahiro Hirano (additional)
Hideo Hosono (additional)

References 24 Referenced 136

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Dates

Type	When
Created	19 years, 6 months ago (Feb. 28, 2006, 6:16 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 11:04 p.m.)
Indexed	1 month ago (July 30, 2025, 6:46 a.m.)
Issued	19 years, 6 months ago (Feb. 27, 2006)
Published	19 years, 6 months ago (Feb. 27, 2006)
Published Online	19 years, 6 months ago (March 1, 2006)
Published Print	19 years, 6 months ago (Feb. 27, 2006)

Funders 0

None

BibTeX

@article{Matsuzaki_2006, title={Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3}, volume={88}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2179373}, DOI={10.1063/1.2179373}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Matsuzaki, Kosuke and Yanagi, Hiroshi and Kamiya, Toshio and Hiramatsu, Hidenori and Nomura, Kenji and Hirano, Masahiro and Hosono, Hideo}, year={2006}, month=feb }

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