Abstract
Effects of interfacial dislocations on the properties of ferroelectric thin films are investigated, using the dynamic Ginzburg–Landau equation. Our results confirm the existence of a dead layer near the film/substrate interface. Due to the combined effects of the dislocations and the near-surface eigenstrain relaxation, the ferroelectric properties of about one-third of the film volume suffers.
References
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Dates
Type | When |
---|---|
Created | 19 years, 6 months ago (Feb. 28, 2006, 6:16 p.m.) |
Deposited | 2 years, 2 months ago (July 2, 2023, 11:19 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:45 a.m.) |
Issued | 19 years, 6 months ago (Feb. 27, 2006) |
Published | 19 years, 6 months ago (Feb. 27, 2006) |
Published Online | 19 years, 6 months ago (March 1, 2006) |
Published Print | 19 years, 6 months ago (Feb. 27, 2006) |
@article{Zheng_2006, title={Simulation of interface dislocations effect on polarization distribution of ferroelectric thin films}, volume={88}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2177365}, DOI={10.1063/1.2177365}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zheng, Yue and Wang, Biao and Woo, C. H.}, year={2006}, month=feb }