DOI: 10.1063/1.2177362. Current-voltage characteristics and parameter retrieval of semiconducting nanowires

Current-voltage characteristics and parameter retrieval of semiconducting nanowires

10.1063/1.2177362

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Electrical transport measurements were conducted on semiconducting nanowires and three distinct current-voltage (I-V) characteristics were observed, i.e., almost symmetric, almost rectifying, and almost linear. These I-V characteristics were modeled by treating the transport in the nanowire as in a metal-semiconductor-metal structure involving two Schottky barriers and a resistor in between these barriers, and the transport is shown to be dominated by the reverse-biased Schottky barrier under low bias and by the semiconducting nanowire at large bias. In contrast to the conventional Schottky diode, the reverse current in the nano-Schottky barrier structure is not negligible and the current is largely tunneling rather than thermionic. Experimental I-V curves are reproduced very well using our model, and a method for extracting nanowire resistance, electron density, and mobility is proposed and applied to ZnO, CdS, and Bi2S3 nanowires.

Bibliography

Zhang, Z. Y., Jin, C. H., Liang, X. L., Chen, Q., & Peng, L.-M. (2006). Current-voltage characteristics and parameter retrieval of semiconducting nanowires. Applied Physics Letters, 88(7).

Authors 5

Z. Y. Zhang (first)
C. H. Jin (additional)
X. L. Liang (additional)
Q. Chen (additional)
L.-M. Peng (additional)

References 16 Referenced 253

10.1063/1.1630380 / Appl. Phys. Lett. (2003)
10.1021/jp0009305 / J. Phys. Chem. B (2000)
10.1063/1.126257 / Appl. Phys. Lett. (2000)
10.1002/1521-4095(20020517)14:10<736::AID-ADMA736>3.0.CO;2-9 / Adv. Mater. (Weinheim, Ger.) (2002)
10.1063/1.1836870 / Appl. Phys. Lett. (2004)
10.1063/1.1802372 / Appl. Phys. Lett. (2004)
10.1063/1.1851621 / Appl. Phys. Lett. (2005)
10.1063/1.1534938 / Appl. Phys. Lett. (2003)
10.1063/1.1851614 / Appl. Phys. Lett. (2005)
{'volume-title': 'Metal-Semiconductor Contact', 'year': '1988', 'key': '2023062220483514600_c10'} / Metal-Semiconductor Contact (1988)
10.1016/0038-1101(71)90109-2 / Solid-State Electron. (1971)
10.1103/PhysRevLett.92.048301 / Phys. Rev. Lett. (2004)
10.1016/0038-1101(66)90097-9 / Solid-State Electron. (1966)
{'key': '2023062220483514600_c14'}
{'volume-title': 'Semiconductors: Other than Group IV Elements and III-V Compounds', 'year': '1992', 'key': '2023062220483514600_c15'} / Semiconductors: Other than Group IV Elements and III-V Compounds (1992)
10.1021/cm970033m / Chem. Mater. (1997)

Dates

Type	When
Created	19 years, 6 months ago (Feb. 13, 2006, 6:02 p.m.)
Deposited	2 years, 2 months ago (June 23, 2023, 5:32 a.m.)
Indexed	3 weeks, 3 days ago (July 30, 2025, 6:46 a.m.)
Issued	19 years, 6 months ago (Feb. 13, 2006)
Published	19 years, 6 months ago (Feb. 13, 2006)
Published Online	19 years, 6 months ago (Feb. 14, 2006)
Published Print	19 years, 6 months ago (Feb. 13, 2006)

Funders 0

None

BibTeX

@article{Zhang_2006, title={Current-voltage characteristics and parameter retrieval of semiconducting nanowires}, volume={88}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2177362}, DOI={10.1063/1.2177362}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zhang, Z. Y. and Jin, C. H. and Liang, X. L. and Chen, Q. and Peng, L.-M.}, year={2006}, month=feb }

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