DOI: 10.1063/1.2168019. Effect of substitutions on the thermoelectric figure of merit of half-Heusler phases at 800 °C

Effect of substitutions on the thermoelectric figure of merit of half-Heusler phases at 800 °C

10.1063/1.2168019

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The merit of thermally stable MNiSn (M=Ti, Zr, Hf) half-Heusler phases, as n-type thermoelectric materials, for high-temperature power generation has been examined. Sb doping at the Sn site is shown to increase both the figure of merit, ZT, and the temperature at which ZT is maximized. The benefits of increased alloying at the M and Ni sites, on the thermal conductivity and thermoelectric transport properties, have also been investigated. The thermoelectric figure of merit, ZT∼0.8 at T∼800°C, for select Sb-doped MNiSn alloys was found to meet or exceed the industry benchmark set by SiGe alloys.

Bibliography

Culp, S. R., Poon, S. J., Hickman, N., Tritt, T. M., & Blumm, J. (2006). Effect of substitutions on the thermoelectric figure of merit of half-Heusler phases at 800âÂ°C. Applied Physics Letters, 88(4).

Authors 5

Slade R. Culp (first)
S. Joseph Poon (additional)
Nicoleta Hickman (additional)
Terry M. Tritt (additional)
J. Blumm (additional)

References 11 Referenced 221

10.1103/PhysRevB.59.8615 / Phys. Rev. B (1999)
10.1088/0953-8984/11/7/004 / J. Phys.: Condens. Matter (1999)
{'key': '2023062423011709300_c3', 'first-page': '37', 'volume-title': 'Semiconductors and Semimetals', 'author': 'Tritt', 'year': '2001'} / Semiconductors and Semimetals by Tritt (2001)
10.1063/1.1318237 / Appl. Phys. Lett. (2000)
10.1063/1.1425459 / Appl. Phys. Lett. (2001)
10.1063/1.1783022 / Appl. Phys. Lett. (2004)
{'key': '2023062423011709300_c7', 'first-page': '2105', 'volume': '86', 'year': '2005', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (2005)
10.1007/BF01307996 / Z. Phys. B: Condens. Matter (1989)
10.1103/PhysRevB.51.10443 / Phys. Rev. B (1995)
10.1002/1521-396X(200110)187:2<507::AID-PSSA507>3.0.CO;2-M / Phys. Status Solidi (2001)
10.1063/1.1488698 / Appl. Phys. Lett. (2002)

Dates

Type	When
Created	19 years, 6 months ago (Jan. 23, 2006, 6:04 p.m.)
Deposited	2 years, 1 month ago (June 25, 2023, 12:32 a.m.)
Indexed	2 days, 5 hours ago (Aug. 19, 2025, 6:04 a.m.)
Issued	19 years, 6 months ago (Jan. 23, 2006)
Published	19 years, 6 months ago (Jan. 23, 2006)
Published Online	19 years, 6 months ago (Jan. 24, 2006)
Published Print	19 years, 6 months ago (Jan. 23, 2006)

Funders 0

None

BibTeX

@article{Culp_2006, title={Effect of substitutions on the thermoelectric figure of merit of half-Heusler phases at 800 °C}, volume={88}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2168019}, DOI={10.1063/1.2168019}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Culp, Slade R. and Poon, S. Joseph and Hickman, Nicoleta and Tritt, Terry M. and Blumm, J.}, year={2006}, month=jan }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        19
      ]
    ],
    "date-time": "2025-08-19T10:04:25Z",
    "timestamp": 1755597865442,
    "version": "3.41.2"
  },
  "reference-count": 11,
  "publisher": "AIP Publishing",
  "issue": "4",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2006,
        1,
        23
      ]
    ]
  },
  "abstract": "<jats:p>The merit of thermally stable MNiSn (M=Ti, Zr, Hf) half-Heusler phases, as n-type thermoelectric materials, for high-temperature power generation has been examined. Sb doping at the Sn site is shown to increase both the figure of merit, ZT, and the temperature at which ZT is maximized. The benefits of increased alloying at the M and Ni sites, on the thermal conductivity and thermoelectric transport properties, have also been investigated. The thermoelectric figure of merit, ZT\u223c0.8 at T\u223c800\u00b0C, for select Sb-doped MNiSn alloys was found to meet or exceed the industry benchmark set by SiGe alloys.</jats:p>",
  "DOI": "10.1063/1.2168019",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2006,
        1,
        23
      ]
    ],
    "date-time": "2006-01-23T23:04:25Z",
    "timestamp": 1138057465000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 221,
  "title": "Effect of substitutions on the thermoelectric figure of merit of half-Heusler phases at 800\u2009\u00b0C",
  "prefix": "10.1063",
  "volume": "88",
  "author": [
    {
      "given": "Slade R.",
      "family": "Culp",
      "sequence": "first",
      "affiliation": [
        {
          "name": "University of Virginia Department of Physics, , Charlottesville, Virginia 22904-4714"
        }
      ]
    },
    {
      "given": "S. Joseph",
      "family": "Poon",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Virginia Department of Physics, , Charlottesville, Virginia 22904-4714"
        }
      ]
    },
    {
      "given": "Nicoleta",
      "family": "Hickman",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Clemson University Complex and Advanced Materials Laboratory, , Clemson, South Carolina 29634"
        }
      ]
    },
    {
      "given": "Terry M.",
      "family": "Tritt",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Clemson University Complex and Advanced Materials Laboratory, , Clemson, South Carolina 29634"
        }
      ]
    },
    {
      "given": "J.",
      "family": "Blumm",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "NETZSCH-Geratebau GmbH , Selb/Bavaria, Germany D-95088"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2006,
        1,
        24
      ]
    ]
  },
  "reference": [
    {
      "key": "2023062423011709300_c1",
      "doi-asserted-by": "publisher",
      "first-page": "8615",
      "DOI": "10.1103/PhysRevB.59.8615",
      "volume": "59",
      "year": "1999",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023062423011709300_c2",
      "doi-asserted-by": "publisher",
      "first-page": "1697",
      "DOI": "10.1088/0953-8984/11/7/004",
      "volume": "11",
      "year": "1999",
      "journal-title": "J. Phys.: Condens. Matter"
    },
    {
      "key": "2023062423011709300_c3",
      "first-page": "37",
      "volume-title": "Semiconductors and Semimetals",
      "author": "Tritt",
      "year": "2001"
    },
    {
      "key": "2023062423011709300_c4",
      "doi-asserted-by": "publisher",
      "first-page": "2476",
      "DOI": "10.1063/1.1318237",
      "volume": "77",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062423011709300_c5",
      "doi-asserted-by": "publisher",
      "first-page": "4165",
      "DOI": "10.1063/1.1425459",
      "volume": "79",
      "year": "2001",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062423011709300_c6",
      "doi-asserted-by": "publisher",
      "first-page": "1140",
      "DOI": "10.1063/1.1783022",
      "volume": "85",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062423011709300_c7",
      "first-page": "2105",
      "volume": "86",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062423011709300_c8",
      "doi-asserted-by": "publisher",
      "first-page": "167",
      "DOI": "10.1007/BF01307996",
      "volume": "75",
      "year": "1989",
      "journal-title": "Z. Phys. B: Condens. Matter"
    },
    {
      "key": "2023062423011709300_c9",
      "doi-asserted-by": "publisher",
      "first-page": "10443",
      "DOI": "10.1103/PhysRevB.51.10443",
      "volume": "51",
      "year": "1995",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023062423011709300_c10",
      "doi-asserted-by": "crossref",
      "first-page": "507",
      "DOI": "10.1002/1521-396X(200110)187:2<507::AID-PSSA507>3.0.CO;2-M",
      "volume": "187",
      "year": "2001",
      "journal-title": "Phys. Status Solidi"
    },
    {
      "key": "2023062423011709300_c11",
      "doi-asserted-by": "publisher",
      "first-page": "43",
      "DOI": "10.1063/1.1488698",
      "volume": "81",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2168019/13140747/042106_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2168019/13140747/042106_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        6,
        25
      ]
    ],
    "date-time": "2023-06-25T04:32:27Z",
    "timestamp": 1687667547000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/88/4/042106/128555/Effect-of-substitutions-on-the-thermoelectric"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2006,
        1,
        23
      ]
    ]
  },
  "references-count": 11,
  "journal-issue": {
    "issue": "4",
    "published-print": {
      "date-parts": [
        [
          2006,
          1,
          23
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2168019",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2006,
        1,
        23
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2006,
        1,
        23
      ]
    ]
  },
  "article-number": "042106"
}