Abstract
Transparent flexible thin-film transistors (tf-TFTs) are an important focus of research since present silicon-based electronics cannot realize such devices. Here, we demonstrate a single-walled carbon nanotube (SWNT) tf-TFTs based on the solution process using transparent electrodes. SWNT tf-TFTs typically exhibit a mobility of 0.5cm2∕Vs and an on/off current ratio of ∼104. More importantly, these transistors are highly flexible and can be bent to a radius of 7.5mm without a significant loss in performance. This study therefore represents a major step towards “SWNT transparent plastic electronics.”
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Dates
Type | When |
---|---|
Created | 19 years, 7 months ago (Jan. 18, 2006, 6:17 p.m.) |
Deposited | 2 years, 2 months ago (June 23, 2023, 8:04 p.m.) |
Indexed | 3 weeks, 3 days ago (July 30, 2025, 6:46 a.m.) |
Issued | 19 years, 7 months ago (Jan. 16, 2006) |
Published | 19 years, 7 months ago (Jan. 16, 2006) |
Published Online | 19 years, 7 months ago (Jan. 19, 2006) |
Published Print | 19 years, 7 months ago (Jan. 16, 2006) |
@article{Takenobu_2006, title={High-performance transparent flexible transistors using carbon nanotube films}, volume={88}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2166693}, DOI={10.1063/1.2166693}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Takenobu, Taishi and Takahashi, Tetsuo and Kanbara, Takayoshi and Tsukagoshi, Kazuhito and Aoyagi, Yoshinobu and Iwasa, Yoshihiro}, year={2006}, month=jan }