DOI: 10.1063/1.2163010. Nanoscale phase changes in crystalline Ge2Sb2Te5 films using scanning probe microscopes

Nanoscale phase changes in crystalline Ge2Sb2Te5 films using scanning probe microscopes

10.1063/1.2163010

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Nanoscale amorphous marks have been produced in crystalline Ge2Sb2Te5 films using an atomic-force microscope (AFM) and a scanning-tunneling microscope (STM) through electrical phase changes. Voltage pulses with duration of 5–100 ns applied by metal probes of the AFM and the STM can produce, respectively, high-resistance regions and deformations, the smallest sizes being ∼10 and ∼100 nm in diameter. Raman-scattering spectra demonstrate that these marks are amorphous. The AFM mark can be erased by applying longer pulses. Formation processes of the marks are considered from electrothermal and thermodynamic aspects.

Bibliography

Satoh, H., Sugawara, K., & Tanaka, K. (2006). Nanoscale phase changes in crystalline Ge2Sb2Te5 films using scanning probe microscopes. Journal of Applied Physics, 99(2).

Authors 3

H. Satoh (first)
K. Sugawara (additional)
K. Tanaka (additional)

References 19 Referenced 79

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Dates

Type	When
Created	19 years, 6 months ago (Feb. 3, 2006, 6:06 p.m.)
Deposited	2 years ago (July 30, 2023, 5:56 p.m.)
Indexed	3 weeks, 1 day ago (July 30, 2025, 6:47 a.m.)
Issued	19 years, 7 months ago (Jan. 15, 2006)
Published	19 years, 7 months ago (Jan. 15, 2006)
Published Online	19 years, 6 months ago (Jan. 23, 2006)
Published Print	19 years, 7 months ago (Jan. 15, 2006)

Funders 0

None

BibTeX

@article{Satoh_2006, title={Nanoscale phase changes in crystalline Ge2Sb2Te5 films using scanning probe microscopes}, volume={99}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.2163010}, DOI={10.1063/1.2163010}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Satoh, H. and Sugawara, K. and Tanaka, K.}, year={2006}, month=jan }

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