DOI: 10.1063/1.2150580. Electrode dependence of resistance switching in polycrystalline NiO films

Electrode dependence of resistance switching in polycrystalline NiO films

10.1063/1.2150580

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We investigated resistance switching in top-electrode/NiO∕Pt structures where the top electrode was Au, Pt, Ti, or Al. For Pt∕NiO∕Pt and Au∕NiO∕Pt structures with ohmic contacts, the effective electric field inside the film was high enough to induce trapping or detrapping at defect states and thus resistance switching. For a Ti∕NiO∕Pt structure with well-defined Schottky contact at Ti∕NiO interface accompanied by an appreciable voltage drop, the effective electric field inside the NiO film was not enough to induce resistance switching. For an Al∕NiO∕Pt structure with a low Schottky barrier at the Al∕NiO interface, resistance switching could be induced at a higher voltage since the voltage drop at the Al∕NiO interface was not negligible but small.

Bibliography

Seo, S., Lee, M. J., Kim, D. C., Ahn, S. E., Park, B.-H., Kim, Y. S., Yoo, I. K., Byun, I. S., Hwang, I. R., Kim, S. H., Kim, J.-S., Choi, J. S., Lee, J. H., Jeon, S. H., Hong, S. H., & Park, B. H. (2005). Electrode dependence of resistance switching in polycrystalline NiO films. Applied Physics Letters, 87(26).

Authors 16

S. Seo (first)
M. J. Lee (additional)
D. C. Kim (additional)
S. E. Ahn (additional)
B.-H Park (additional)
Y. S. Kim (additional)
I. K. Yoo (additional)
I. S. Byun (additional)
I. R. Hwang (additional)
S. H. Kim (additional)
J.-S. Kim (additional)
J. S. Choi (additional)
J. H. Lee (additional)
S. H. Jeon (additional)
S. H. Hong (additional)
B. H. Park (additional)

References 13 Referenced 92

M. J. Rozenberg, I. H. Inoue, and M. J. Sánchez, cond-mat/0406646.
10.1063/1.1590741 / Appl. Phys. Lett. (2003)
10.1063/1.1812580 / Appl. Phys. Lett. (2004)
10.1103/PhysRevB.70.224403 / Phys. Rev. B (2004)
10.1063/1.1768305 / Appl. Phys. Lett. (2004)
10.1063/1.1831560 / Appl. Phys. Lett. (2004)
10.1063/1.1845598 / Appl. Phys. Lett. (2005)
10.1103/PhysRevB.71.045305 / Phys. Rev. B (2005)
10.1103/PhysRevLett.52.1830 / Phys. Rev. Lett. (1984)
10.1143/JJAP.37.4900 / Jpn. J. Appl. Phys., Part 1 (1998)
10.1016/0038-1101(71)90109-2 / Solid-State Electron. (1971)
10.1063/1.115571 / Appl. Phys. Lett. (1996)
10.1103/PhysRevLett.73.2107 / Phys. Rev. Lett. (1994)

Dates

Type	When
Created	19 years, 7 months ago (Dec. 28, 2005, 6:10 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 9:06 p.m.)
Indexed	3 weeks, 5 days ago (July 30, 2025, 6:46 a.m.)
Issued	19 years, 7 months ago (Dec. 26, 2005)
Published	19 years, 7 months ago (Dec. 26, 2005)
Published Online	19 years, 7 months ago (Dec. 29, 2005)
Published Print	19 years, 7 months ago (Dec. 26, 2005)

Funders 0

None

BibTeX

@article{Seo_2005, title={Electrode dependence of resistance switching in polycrystalline NiO films}, volume={87}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2150580}, DOI={10.1063/1.2150580}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Seo, S. and Lee, M. J. and Kim, D. C. and Ahn, S. E. and Park, B.-H and Kim, Y. S. and Yoo, I. K. and Byun, I. S. and Hwang, I. R. and Kim, S. H. and Kim, J.-S. and Choi, J. S. and Lee, J. H. and Jeon, S. H. and Hong, S. H. and Park, B. H.}, year={2005}, month=dec }

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