Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We establish the limits of magnetism in thin, electronic grade, hafnium oxide, and hafnium silicate films deposited onto silicon wafers by chemical vapor deposition and atomic layer deposition. To the limits of sensitivity of our measurement techniques, no ferromagnetism occurs in these samples. Contamination by handling with stainless-steel tweezers leads to a measurable magnetic signal. The magnetic properties of this contamination are similar to those attributed to ferromagnetic HfO2 in a recent report, including the magnitude of moment, magnetization field dependence, and spatial asymmetry.

Bibliography

Abraham, D. W., Frank, M. M., & Guha, S. (2005). Absence of magnetism in hafnium oxide films. Applied Physics Letters, 87(25).

Authors 3
  1. David W. Abraham (first)
  2. Martin M. Frank (additional)
  3. Supratik Guha (additional)
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Dates
Type When
Created 19 years, 8 months ago (Dec. 21, 2005, 3:20 p.m.)
Deposited 2 years, 1 month ago (July 2, 2023, 9:16 p.m.)
Indexed 2 weeks, 3 days ago (Aug. 6, 2025, 9:46 a.m.)
Issued 19 years, 8 months ago (Dec. 12, 2005)
Published 19 years, 8 months ago (Dec. 12, 2005)
Published Online 19 years, 8 months ago (Dec. 12, 2005)
Published Print 19 years, 8 months ago (Dec. 19, 2005)
Funders 0

None

@article{Abraham_2005, title={Absence of magnetism in hafnium oxide films}, volume={87}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2146057}, DOI={10.1063/1.2146057}, number={25}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Abraham, David W. and Frank, Martin M. and Guha, Supratik}, year={2005}, month=dec }