Abstract
It is well understood that due to substrate induced clamping the piezoresponse in thin ferroelectric films is lower than bulk. Recent studies on the effect of lateral scaling have shown that by creating nanostructures one can achieve high piezoelectric constants even in thin films. In this letter we present a simple analytical model, to describe the evolution of the out-of-plane piezoresponse as a function of the device size in 100-nm-thick PbZrxTi1−xO3 thin films. It is shown that by an effective clamping stress analysis, one can successfully map out the size dependence of the piezoelectric constants in thin ferroelectric films. The results of the model are also compared to the predictions made by finite element analysis.
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Dates
Type | When |
---|---|
Created | 19 years, 8 months ago (Dec. 7, 2005, 6:15 p.m.) |
Deposited | 2 years, 1 month ago (July 31, 2023, 6:33 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:46 a.m.) |
Issued | 19 years, 8 months ago (Dec. 8, 2005) |
Published | 19 years, 8 months ago (Dec. 8, 2005) |
Published Online | 19 years, 8 months ago (Dec. 8, 2005) |
Published Print | 19 years, 8 months ago (Dec. 12, 2005) |
@article{Nagarajan_2005, title={Scaling of the piezoelectric response in ferroelectric nanostructures: An effective clamping stress model}, volume={87}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2143129}, DOI={10.1063/1.2143129}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Nagarajan, V.}, year={2005}, month=dec }