DOI: 10.1063/1.2141927. Electronic properties of InN nanowires

10.1063/1.2141927

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Indium nitride nanowires (NWs) grown by a catalyst-free, vapor-solid method are shown to be high-purity, single-crystal hexagonal wurtzite and intrinsic n type with uniform diameters that range from 70to150nm and lengths that vary between 3 and 30μm. Single NWs were fabricated into field-effect transistors and the electronic material parameters of the wires were extracted and are found to be identical to comparable bulk InN.

Bibliography

Cheng, G., Stern, E., Turner-Evans, D., & Reed, M. A. (2005). Electronic properties of InN nanowires. Applied Physics Letters, 87(25).

Authors 4

Guosheng Cheng (first)
Eric Stern (additional)
Daniel Turner-Evans (additional)
Mark A Reed (additional)

References 36 Referenced 49

10.1063/1.111832 / Appl. Phys. Lett. (1994)
10.1126/science.281.5379.956 / Science (1998)
10.1116/1.585897 / J. Vac. Sci. Technol. B (1992)
10.1063/1.1368156 / J. Appl. Phys. (2001)
10.1016/j.mser.2004.11.002 / Mater. Sci. Eng., R. (2005)
10.1016/j.spmi.2005.03.004 / Superlattices Microstruct. (2005)
10.1088/0953-8984/16/12/R01 / J. Phys.: Condens. Matter (2004)
10.1063/1.1947914 / Appl. Phys. Lett. (2005)
10.1016/j.jcrysgro.2004.12.001 / J. Cryst. Growth (2005)
10.1063/1.1861513 / Appl. Phys. Lett. (2005)
10.1016/j.spmi.2004.10.003 / Superlattices Microstruct. (2004)
10.1143/JJAP.40.L91 / Jpn. J. Appl. Phys., Part 2 (2001)
10.1063/1.1402649 / Appl. Phys. Lett. (2001)
10.1016/j.jcrysgro.2004.10.152 / J. Cryst. Growth (2005)
10.1021/cm950108r / Chem. Mater. (1996)
10.1016/0022-0248(94)90979-2 / J. Cryst. Growth (1994)
10.1021/nl0505804 / Nano Lett. (2005)
10.1002/adma.200306684 / Adv. Mater. (Weinheim, Ger.) (2004)
10.1063/1.1831563 / Appl. Phys. Lett. (2004)
10.1063/1.1490636 / Appl. Phys. Lett. (2002)
10.1016/j.jcrysgro.2004.05.037 / J. Cryst. Growth (2004)
10.1016/j.physleta.2005.01.048 / Phys. Lett. A (2005)
10.1557/jmr.2004.19.2.423 / J. Mater. Res. (2004)
10.1063/1.2037850 / Appl. Phys. Lett. (2005)
10.1039/b111270h / J. Mater. Chem. (2002)
10.1002/smll.200400011 / Small (2004)
10.1039/b309576b / J. Mater. Chem. (2004)
{'key': '2023070301171173900_c28'}
10.1016/j.jcrysgro.2004.05.034 / J. Cryst. Growth (2004)
10.1063/1.1595135 / J. Appl. Phys. (2003)
{'volume-title': 'Nanotechnology', 'key': '2023070301171173900_c31'} / Nanotechnology
10.1016/S0022-0248(98)00331-5 / J. Cryst. Growth (1998)
10.1116/1.586700 / J. Vac. Sci. Technol. B (1993)
10.1063/1.111451 / Appl. Phys. Lett. (1994)
10.1016/0022-0248(94)00475-7 / J. Cryst. Growth (1994)
10.1049/el:19840729 / Electron. Lett. (1984)

Dates

Type	When
Created	19 years, 8 months ago (Dec. 21, 2005, 3:20 p.m.)
Deposited	2 years, 2 months ago (July 2, 2023, 9:17 p.m.)
Indexed	1 month ago (July 30, 2025, 6:46 a.m.)
Issued	19 years, 8 months ago (Dec. 12, 2005)
Published	19 years, 8 months ago (Dec. 12, 2005)
Published Online	19 years, 8 months ago (Dec. 12, 2005)
Published Print	19 years, 8 months ago (Dec. 19, 2005)

Funders 0

None

BibTeX

@article{Cheng_2005, title={Electronic properties of InN nanowires}, volume={87}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2141927}, DOI={10.1063/1.2141927}, number={25}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Cheng, Guosheng and Stern, Eric and Turner-Evans, Daniel and Reed, Mark A}, year={2005}, month=dec }

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