Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

A method for the switching of the spin polarization of the electric current injected into a semiconductor is proposed, based on injecting spins from a diluted magnetic semiconductor through a ferroelectric tunnel barrier. We show that the reversal of the electric polarization of the ferroelectric results in a sizable change in the spin polarization of the injected current, thereby providing a two-state electrical control of this spintronic device. We also predict a possibility of switching of tunneling magnetoresistance in magnetic tunnel junctions with a ferroelectric barrier and coexistence of tunneling magnetoresistance and giant electroresistance effects in these multiferroic tunnel junctions.

Bibliography

Zhuravlev, M. Ye., Jaswal, S. S., Tsymbal, E. Y., & Sabirianov, R. F. (2005). Ferroelectric switch for spin injection. Applied Physics Letters, 87(22).

Authors 4
  1. M. Ye. Zhuravlev (first)
  2. S. S. Jaswal (additional)
  3. E. Y. Tsymbal (additional)
  4. R. F. Sabirianov (additional)
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Dates
Type When
Created 19 years, 9 months ago (Nov. 22, 2005, 6:02 p.m.)
Deposited 2 years, 1 month ago (July 2, 2023, 1:24 p.m.)
Indexed 5 days, 9 hours ago (Aug. 19, 2025, 6:30 a.m.)
Issued 19 years, 9 months ago (Nov. 23, 2005)
Published 19 years, 9 months ago (Nov. 23, 2005)
Published Online 19 years, 9 months ago (Nov. 23, 2005)
Published Print 19 years, 8 months ago (Nov. 28, 2005)
Funders 0

None

@article{Zhuravlev_2005, title={Ferroelectric switch for spin injection}, volume={87}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2138365}, DOI={10.1063/1.2138365}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zhuravlev, M. Ye. and Jaswal, S. S. and Tsymbal, E. Y. and Sabirianov, R. F.}, year={2005}, month=nov }