DOI: 10.1063/1.2126140. High-performance organic thin-film transistors with metal oxide/metal bilayer electrode

High-performance organic thin-film transistors with metal oxide/metal bilayer electrode

10.1063/1.2126140

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We demonstrate bilayer source-drain (S-D) electrodes for organic thin film transistors (OTFT). The bilayer consists of a transition metal oxide (MoO3,WO3, or V2O5) layer and a metal layer. The metal oxide layer, directly contacting the organic semiconducting layer, serves as the charge-injection layer. The overcoated metal layer is responsible for the conduction of charge carriers. We found that the metal oxide layer coupled between pentacene and metal layers played an important role in improving the field-effect transistor characteristics of OTFTs. Devices with the bilayer S-D electrodes showed enhanced hole-injection compared to those with only metal electrode. High field-effect mobility of 0.4cm2∕Vs and on/off current ratios of 104 were obtained in the pentacene based TFTs using the bilayer S-D electrodes at a gate bias of −40V. The improvement is attributed to the reduction in the contact barrier and the prevention of metal diffusion into the organic layer and/or unfavorable chemical reaction between the organic layer and the metal electrode.

Bibliography

Chu, C.-W., Li, S.-H., Chen, C.-W., Shrotriya, V., & Yang, Y. (2005). High-performance organic thin-film transistors with metal oxide/metal bilayer electrode. Applied Physics Letters, 87(19).

Authors 5

Chih-Wei Chu (first)
Sheng-Han Li (additional)
Chieh-Wei Chen (additional)
Vishal Shrotriya (additional)
Yang Yang (additional)

References 16 Referenced 334

10.1063/1.98799 / Appl. Phys. Lett. (1987)
10.1063/1.1534621 / J. Appl. Phys. (2003)
10.1021/jp992853n / J. Phys. Chem. B (2000)
10.1109/55.644085 / IEEE Trans. Electron Devices (1997)
10.1063/1.1491009 / Appl. Phys. Lett. (2002)
10.1889/1.1832444 / SID Int. Symp. Digest Tech. Papers (2003)
10.1002/1521-4095(20020219)14:4<265::AID-ADMA265>3.0.CO;2-M / Adv. Mater. (Weinheim, Ger.) (2002)
10.1002/adma.19970090504 / Adv. Mater. (Weinheim, Ger.) (1997)
10.1002/adma.200305623 / Adv. Mater. (Weinheim, Ger.) (2003)
{'volume-title': 'Physics of Semiconductor Devices', 'year': '1981', 'key': '2023070220065371800_c10'} / Physics of Semiconductor Devices (1981)
10.1063/1.1794375 / Appl. Phys. Lett. (2004)
{'volume-title': 'Transition Metal Oxides, An Introduction to Their Electronic Structure and Properties', 'year': '1992', 'key': '2023070220065371800_c12'} / Transition Metal Oxides, An Introduction to Their Electronic Structure and Properties (1992)
10.1016/S0368-2048(97)00071-6 / J. Electron Spectrosc. Relat. Phenom. (1997)
10.1103/PhysRev.166.912 / Phys. Rev. (1968)
10.1063/1.1658710 / J. Appl. Phys. (1970)
10.1063/1.1485129 / Appl. Phys. Lett. (2002)

Dates

Type	When
Created	19 years, 10 months ago (Nov. 2, 2005, 6:20 p.m.)
Deposited	2 years, 2 months ago (July 2, 2023, 4:07 p.m.)
Indexed	1 week, 6 days ago (Aug. 23, 2025, 9:09 p.m.)
Issued	19 years, 10 months ago (Nov. 3, 2005)
Published	19 years, 10 months ago (Nov. 3, 2005)
Published Online	19 years, 10 months ago (Nov. 3, 2005)
Published Print	19 years, 9 months ago (Nov. 7, 2005)

Funders 0

None

BibTeX

@article{Chu_2005, title={High-performance organic thin-film transistors with metal oxide/metal bilayer electrode}, volume={87}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2126140}, DOI={10.1063/1.2126140}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chu, Chih-Wei and Li, Sheng-Han and Chen, Chieh-Wei and Shrotriya, Vishal and Yang, Yang}, year={2005}, month=nov }

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