Abstract
The mobility of pentacene thin-film transistors (TFTs) is correlated with the dielectric properties of their insulators. We varied the dielectric properties of the poly(4-vinylphenol) insulators of such TFTs by changing the molar ratio of the prepolymer/cross-linking agent while keeping the surface potential of the insulator surface constant. It was found that the field-effect mobility of the pentacene TFTs increases with increases in the dielectric constant of the insulators. A small increase in the dielectric constant of the insulator (a 20% increase, 3.6–4.3) was found to result in a dramatic increase in the field-effect mobility of pentacene TFTs by a factor of 3 (0.26to0.81cm2∕Vs).
References
29
Referenced
73
10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO;2-9
/ Adv. Mater. (Weinheim, Germany) (2002)10.1002/(SICI)1521-4095(199803)10:5<365::AID-ADMA365>3.3.CO;2-L
/ Adv. Mater. (Weinheim, Germany) (1998)10.1063/1.121205
/ Appl. Phys. Lett. (1998)10.1002/adfm.200400054
/ Adv. Func. Mater. (2005)10.1021/la047061l
/ Langmuir (2005)10.1002/marc.200400647
/ Macromol. Rapid Commun. (2005)10.1021/cm049598q
/ Chem. Mater. (2004)10.1126/science.1081279
/ Science (2003){'key': '2023070300572274600_c9', 'first-page': '2123', 'volume': '190', 'year': '2000', 'journal-title': 'Science'}
/ Science (2000)10.1117/12.504515
/ Proc. SPIE (2003)10.1117/12.506038
/ Proc. SPIE (2003)10.1117/12.507627
/ Proc. SPIE (2003)10.1002/adfm.200390030
/ Adv. Fun. Mater. (2003)10.1063/1.103994
/ Appl. Phys. Lett. (1990)10.1063/1.1636524
/ J. Appl. Phys. (2004)10.1063/1.1491009
/ Appl. Phys. Lett. (2002)10.1063/1.1841470
/ Appl. Phys. Lett. (2004)10.1016/j.synthmet.2004.08.034
/ Synth. Met. (2005)10.1016/S0379-6779(02)00958-X
/ Synth. Met. (2003)10.1038/nmat1105
/ Nature Materials (2004){'key': '2023070300572274600_c21', 'first-page': '352', 'volume-title': 'Treatise on Adhesion and Adhesives', 'author': 'Patrick', 'year': '1967'}
/ Treatise on Adhesion and Adhesives by Patrick (1967){'volume-title': 'MOSFET Models for VLSI Circuit Simulation Theory and Practice', 'year': '1993', 'key': '2023070300572274600_c22'}
/ MOSFET Models for VLSI Circuit Simulation Theory and Practice (1993)10.1016/0032-3861(94)90499-5
/ Polymer (1994)10.1007/BF00722860
/ J. Mater. Sci. Lett. (1990)10.1063/1.363032
/ J. Appl. Phys. (1996)10.1002/adfm.200305047
/ Adv. Func. Mater. (2004){'volume-title': 'MOSFET Models for VLSI Circuit Simulation Theory and Practice', 'year': '1993', 'key': '2023070300572274600_c27'}
/ MOSFET Models for VLSI Circuit Simulation Theory and Practice (1993)10.1126/science.283.5403.822
/ Science (1999)10.1016/S1566-1199(02)00034-4
/ Org. Electron. (2002)
Dates
Type | When |
---|---|
Created | 19 years, 10 months ago (Oct. 4, 2005, 6:03 p.m.) |
Deposited | 2 years, 1 month ago (July 2, 2023, 8:57 p.m.) |
Indexed | 4 days, 11 hours ago (Aug. 23, 2025, 9:27 p.m.) |
Issued | 19 years, 10 months ago (Oct. 5, 2005) |
Published | 19 years, 10 months ago (Oct. 5, 2005) |
Published Online | 19 years, 10 months ago (Oct. 5, 2005) |
Published Print | 19 years, 10 months ago (Oct. 10, 2005) |
@article{Jang_2005, title={Influence of the dielectric constant of a polyvinyl phenol insulator on the field-effect mobility of a pentacene-based thin-film transistor}, volume={87}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2093940}, DOI={10.1063/1.2093940}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Jang, Yunseok and Kim, Do Hwan and Park, Yeong Don and Cho, Jeong Ho and Hwang, Minkyu and Cho, Kilwon}, year={2005}, month=oct }