Abstract
Organic field-effect transistors were fabricated using offset printed source/drain structures. Interdigitated electrode structures were printed with a poly(3,4–ethylenedioxythiophene) (PEDOT) formulation. A polymeric semiconductor polytriarylamine and different insulator layers were deposited by spin coating. A field-effect mobility of 3×10−3cm2V−1s−1 and on/off ratio of about 103 was achieved, making it possible to produce digital logic elements.
References
7
Referenced
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{'year': '2002', 'key': '2023073109130823600_c1', 'first-page': '172'}
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Dates
Type | When |
---|---|
Created | 19 years, 11 months ago (Sept. 14, 2005, 6:24 p.m.) |
Deposited | 2 years, 1 month ago (July 31, 2023, 5:13 a.m.) |
Indexed | 1 month ago (July 30, 2025, 6:46 a.m.) |
Issued | 19 years, 11 months ago (Sept. 15, 2005) |
Published | 19 years, 11 months ago (Sept. 15, 2005) |
Published Online | 19 years, 11 months ago (Sept. 15, 2005) |
Published Print | 19 years, 11 months ago (Sept. 19, 2005) |
@article{Zielke_2005, title={Polymer-based organic field-effect transistor using offset printed source/drain structures}, volume={87}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2056579}, DOI={10.1063/1.2056579}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zielke, Dirk and Hübler, Arved C. and Hahn, Ulrich and Brandt, Nicole and Bartzsch, Matthias and Fügmann, Uta and Fischer, Thomas and Veres, Janos and Ogier, Simon}, year={2005}, month=sep }