Abstract
Using single-crystal organic field-effect transistors with the conduction channel exposed to environmental agents, we have observed generation of electronic defects at the organic surface in the high-vacuum environment. Rapid decrease of the source–drain current of an operating device is observed upon exposure of the channel to the species generated by high-vacuum gauges. We attribute this effect to interaction of the organic surface with electrically neutral free radicals produced in the process of hydrocarbon cracking on hot filaments with a relatively low activation energy Ea∼2.5eV (240kJ∕mol). The reported results might be important for optimizing the high-vacuum processes of fabrication and characterization of a wide range of organic and molecular electronic devices.
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Dates
Type | When |
---|---|
Created | 20 years ago (Aug. 23, 2005, 6:03 p.m.) |
Deposited | 2 years, 1 month ago (June 30, 2023, 10:47 p.m.) |
Indexed | 3 weeks, 4 days ago (Aug. 2, 2025, 12:11 a.m.) |
Issued | 20 years ago (Aug. 24, 2005) |
Published | 20 years ago (Aug. 24, 2005) |
Published Online | 20 years ago (Aug. 24, 2005) |
Published Print | 19 years, 11 months ago (Aug. 29, 2005) |
@article{Podzorov_2005, title={Interaction of organic surfaces with active species in the high-vacuum environment}, volume={87}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2035323}, DOI={10.1063/1.2035323}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Podzorov, V. and Menard, E. and Pereversev, S. and Yakshinsky, B. and Madey, T. and Rogers, J. A. and Gershenson, M. E.}, year={2005}, month=aug }