DOI: 10.1063/1.2009835. Nanoscale imaging of grain orientations and ferroelectric domains in (Bi1−xLax)4Ti3O12 films for ferroelectric memories

Nanoscale imaging of grain orientations and ferroelectric domains in (Bi1−xLax)4Ti3O12 films for ferroelectric memories

10.1063/1.2009835

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report results of nanoscopic investigation of grain crystallographic orientations and ferroelectric domains by electron backscatter diffraction (EBSD) technique and piezoresponse force microscope (PFM), respectively, in (Bi1−xLax)4Ti3O12 (BLT) films for ferroelectric semiconductor memories. It is demonstrated that the EBSD technique is useful in characterizing nanoscale grain crystallographic orientations of BLT films. Comparison studies of grain orientations by EBSD technique and switching properties of ferroelectric domains by PFM show that c-axis parallel to normal oriented grains with almost linear dielectric properties have platelike morphology. However, a- or b-axis oriented grains with superior ferroelectric properties have ellipsoidal morphology with a size of less than 0.2μm in long axis. Consequently, the suppression of the platelike structures through process controls is important for the realization of high-density BLT-based memories.

Bibliography

Yang, B., Park, N. J., Seo, B. I., Oh, Y. H., Kim, S. J., Hong, S. K., Lee, S. S., & Park, Y. J. (2005). Nanoscale imaging of grain orientations and ferroelectric domains in (Bi1âxLax)4Ti3O12 films for ferroelectric memories. Applied Physics Letters, 87(6).

Authors 8

B. Yang (first)
N. J. Park (additional)
B. I. Seo (additional)
Y. H. Oh (additional)
S. J. Kim (additional)
S. K. Hong (additional)
S. S. Lee (additional)
Y. J. Park (additional)

References 19 Referenced 14

10.1016/S0921-5093(98)00835-1 / Mater. Sci. Eng., A (1998)
10.1016/0921-5093(93)90452-K / Mater. Sci. Eng., A (1993)
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{'key': '2023070302332032300_c4', 'first-page': '3739', 'volume': '426', 'year': '2003', 'journal-title': 'Mater. Sci. Forum'} / Mater. Sci. Forum (2003)
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10.1109/LED.2002.806299 / IEEE Electron Device Lett. (2002)
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{'first-page': '791', 'volume-title': 'Int. Electron Device Meet. Tech. Dig.', 'year': '2001', 'key': '2023070302332032300_c8'} / Int. Electron Device Meet. Tech. Dig. (2001)
10.1038/44352 / Nature (London) (1999)
10.1063/1.1468914 / Appl. Phys. Lett. (2002)
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Dates

Type	When
Created	20 years ago (Aug. 3, 2005, 6:23 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 10:33 p.m.)
Indexed	4 weeks, 2 days ago (July 30, 2025, 6:45 a.m.)
Issued	20 years ago (Aug. 4, 2005)
Published	20 years ago (Aug. 4, 2005)
Published Online	20 years ago (Aug. 4, 2005)
Published Print	20 years ago (Aug. 8, 2005)

Funders 0

None

BibTeX

@article{Yang_2005, title={Nanoscale imaging of grain orientations and ferroelectric domains in (Bi1−xLax)4Ti3O12 films for ferroelectric memories}, volume={87}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2009835}, DOI={10.1063/1.2009835}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yang, B. and Park, N. J. and Seo, B. I. and Oh, Y. H. and Kim, S. J. and Hong, S. K. and Lee, S. S. and Park, Y. J.}, year={2005}, month=aug }

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