Abstract
The aberration-corrected scanning transmission electron microscope allows probes to be formed with less than 1-Å diameter, providing sufficient sensitivity to observe individual Hf atoms within the SiO2 passivating layer of a HfO2∕SiO2∕Si alternative gate dielectric stack. Furthermore, the depth resolution is sufficient to localize the atom positions to half-nanometer precision in the third dimension. From a through-focal series of images, we demonstrate a three-dimensional reconstruction of the Hf atom sites, representing a three-dimensional map of potential breakdown sites within the gate dielectric.
Authors
11
- Klaus van Benthem (first)
- Andrew R. Lupini (additional)
- Miyoung Kim (additional)
- Hion Suck Baik (additional)
- SeokJoo Doh (additional)
- Jong-Ho Lee (additional)
- Mark P. Oxley (additional)
- Scott D. Findlay (additional)
- Leslie J. Allen (additional)
- Julia T. Luck (additional)
- Stephen J. Pennycook (additional)
References
27
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Dates
Type | When |
---|---|
Created | 20 years, 1 month ago (July 13, 2005, 6:13 p.m.) |
Deposited | 2 years, 1 month ago (July 2, 2023, 9:12 p.m.) |
Indexed | 3 weeks, 6 days ago (July 30, 2025, 6:45 a.m.) |
Issued | 20 years, 1 month ago (July 14, 2005) |
Published | 20 years, 1 month ago (July 14, 2005) |
Published Online | 20 years, 1 month ago (July 14, 2005) |
Published Print | 20 years, 1 month ago (July 18, 2005) |
@article{van_Benthem_2005, title={Three-dimensional imaging of individual hafnium atoms inside a semiconductor device}, volume={87}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1991989}, DOI={10.1063/1.1991989}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={van Benthem, Klaus and Lupini, Andrew R. and Kim, Miyoung and Baik, Hion Suck and Doh, SeokJoo and Lee, Jong-Ho and Oxley, Mark P. and Findlay, Scott D. and Allen, Leslie J. and Luck, Julia T. and Pennycook, Stephen J.}, year={2005}, month=jul }