Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

The aberration-corrected scanning transmission electron microscope allows probes to be formed with less than 1-Å diameter, providing sufficient sensitivity to observe individual Hf atoms within the SiO2 passivating layer of a HfO2∕SiO2∕Si alternative gate dielectric stack. Furthermore, the depth resolution is sufficient to localize the atom positions to half-nanometer precision in the third dimension. From a through-focal series of images, we demonstrate a three-dimensional reconstruction of the Hf atom sites, representing a three-dimensional map of potential breakdown sites within the gate dielectric.

Bibliography

van Benthem, K., Lupini, A. R., Kim, M., Baik, H. S., Doh, S., Lee, J.-H., Oxley, M. P., Findlay, S. D., Allen, L. J., Luck, J. T., & Pennycook, S. J. (2005). Three-dimensional imaging of individual hafnium atoms inside a semiconductor device. Applied Physics Letters, 87(3).

Authors 11
  1. Klaus van Benthem (first)
  2. Andrew R. Lupini (additional)
  3. Miyoung Kim (additional)
  4. Hion Suck Baik (additional)
  5. SeokJoo Doh (additional)
  6. Jong-Ho Lee (additional)
  7. Mark P. Oxley (additional)
  8. Scott D. Findlay (additional)
  9. Leslie J. Allen (additional)
  10. Julia T. Luck (additional)
  11. Stephen J. Pennycook (additional)
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  26. See EPAPS Document No. E-APPLAB-87-016529 for a video clip of the 3D reconstruction. This document can be reached via a direct link in the online article’s HTML reference section or via the EPAPS homepage (http://www.aip.org/pubservs/epaps.html).
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Dates
Type When
Created 20 years, 1 month ago (July 13, 2005, 6:13 p.m.)
Deposited 2 years, 1 month ago (July 2, 2023, 9:12 p.m.)
Indexed 3 weeks, 6 days ago (July 30, 2025, 6:45 a.m.)
Issued 20 years, 1 month ago (July 14, 2005)
Published 20 years, 1 month ago (July 14, 2005)
Published Online 20 years, 1 month ago (July 14, 2005)
Published Print 20 years, 1 month ago (July 18, 2005)
Funders 0

None

@article{van_Benthem_2005, title={Three-dimensional imaging of individual hafnium atoms inside a semiconductor device}, volume={87}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1991989}, DOI={10.1063/1.1991989}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={van Benthem, Klaus and Lupini, Andrew R. and Kim, Miyoung and Baik, Hion Suck and Doh, SeokJoo and Lee, Jong-Ho and Oxley, Mark P. and Findlay, Scott D. and Allen, Leslie J. and Luck, Julia T. and Pennycook, Stephen J.}, year={2005}, month=jul }