DOI: 10.1063/1.1946197. Structural transformation of SbxSe100−x thin films for phase change nonvolatile memory applications

Structural transformation of SbxSe100−x thin films for phase change nonvolatile memory applications

10.1063/1.1946197

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The structural transformation and transformation kinetics of SbxSe100−x films (60⩽x⩽70) were studied to investigate the feasibility of applying SbxSe100−x alloys in phase change nonvolatile memories. Temperature-dependent van der Pauw measurements, x-ray diffraction, x-ray reflectometry, and a static tester were used to determine the structure and transformation kinetics of the SbxSe100−x films. The sheet resistance difference between the amorphous and crystalline states was higher than 104Ω∕◻. The crystalline structure of the metastable phase of SbxSe100−x alloys, which plays a major role in fast crystallization, is similar to that of Sb2Te (rhombohedral structure). The transition temperature, sheet resistance, and activation energy for transformation decrease as the amount of Sb increases in the SbxSe100−x film. The density and thickness variation of the Sb65Se35 thin film were 5.9% and 5.4%, respectively. Applying the Kissinger method, the activation energies for crystallization were in the range from 1.90±0.15to4.16±0.28eV. The desired crystallization speed can be obtained by a systematic change of the composition owing to the variation of the activation barrier with stoichiometry.

Authors 6

M. J. Kang (first)
S. Y. Choi (additional)
D. Wamwangi (additional)
K. Wang (additional)
C. Steimer (additional)
M. Wuttig (additional)

References 27 Referenced 59

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Dates

Type	When
Created	20 years, 1 month ago (July 5, 2005, 6 p.m.)
Deposited	2 years, 1 month ago (July 25, 2023, 6:25 p.m.)
Indexed	1 month ago (July 30, 2025, 6:45 a.m.)
Issued	20 years, 2 months ago (July 1, 2005)
Published	20 years, 2 months ago (July 1, 2005)
Published Online	20 years, 1 month ago (July 7, 2005)
Published Print	20 years, 2 months ago (July 1, 2005)

Funders 0

None

BibTeX

@article{Kang_2005, title={Structural transformation of SbxSe100−x thin films for phase change nonvolatile memory applications}, volume={98}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1946197}, DOI={10.1063/1.1946197}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kang, M. J. and Choi, S. Y. and Wamwangi, D. and Wang, K. and Steimer, C. and Wuttig, M.}, year={2005}, month=jul }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:45:55Z",
    "timestamp": 1753872355624,
    "version": "3.41.2"
  },
  "reference-count": 27,
  "publisher": "AIP Publishing",
  "issue": "1",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2005,
        7,
        1
      ]
    ]
  },
  "abstract": "<jats:p>The structural transformation and transformation kinetics of SbxSe100\u2212x films (60\u2a7dx\u2a7d70) were studied to investigate the feasibility of applying SbxSe100\u2212x alloys in phase change nonvolatile memories. Temperature-dependent van der Pauw measurements, x-ray diffraction, x-ray reflectometry, and a static tester were used to determine the structure and transformation kinetics of the SbxSe100\u2212x films. The sheet resistance difference between the amorphous and crystalline states was higher than 104\u03a9\u2215\u25fb. The crystalline structure of the metastable phase of SbxSe100\u2212x alloys, which plays a major role in fast crystallization, is similar to that of Sb2Te (rhombohedral structure). The transition temperature, sheet resistance, and activation energy for transformation decrease as the amount of Sb increases in the SbxSe100\u2212x film. The density and thickness variation of the Sb65Se35 thin film were 5.9% and 5.4%, respectively. Applying the Kissinger method, the activation energies for crystallization were in the range from 1.90\u00b10.15to4.16\u00b10.28eV. The desired crystallization speed can be obtained by a systematic change of the composition owing to the variation of the activation barrier with stoichiometry.</jats:p>",
  "DOI": "10.1063/1.1946197",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2005,
        7,
        5
      ]
    ],
    "date-time": "2005-07-05T22:00:38Z",
    "timestamp": 1120600838000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 59,
  "title": "Structural transformation of SbxSe100\u2212x thin films for phase change nonvolatile memory applications",
  "prefix": "10.1063",
  "volume": "98",
  "author": [
    {
      "given": "M. J.",
      "family": "Kang",
      "sequence": "first",
      "affiliation": [
        {
          "name": "I. Physikalisches Institut Rheinisch Westf\u00e4lische Technische Hockschule (RWTH) Aachen , D-52056 Aachen, Germany and , 120-749 Seoul, Korea"
        },
        {
          "name": "School of New Materials Science and Engineering Yonsei University , D-52056 Aachen, Germany and , 120-749 Seoul, Korea"
        }
      ]
    },
    {
      "given": "S. Y.",
      "family": "Choi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "School of New Materials Science and Engineering Yonsei University , 120-749 Seoul, Korea"
        }
      ]
    },
    {
      "given": "D.",
      "family": "Wamwangi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "I. Physikalisches Institut Rheinisch Westf\u00e4lische Technische Hockschule (RWTH) Aachen , D-52056 Aachen, Germany"
        }
      ]
    },
    {
      "given": "K.",
      "family": "Wang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "I. Physikalisches Institut Rheinisch Westf\u00e4lische Technische Hockschule (RWTH) Aachen , D-52056 Aachen, Germany"
        }
      ]
    },
    {
      "given": "C.",
      "family": "Steimer",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "I. Physikalisches Institut Rheinisch Westf\u00e4lische Technische Hockschule (RWTH) Aachen , D-52056 Aachen, Germany"
        }
      ]
    },
    {
      "given": "M.",
      "family": "Wuttig",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "I. Physikalisches Institut Rheinisch Westf\u00e4lische Technische Hockschule (RWTH) Aachen , D-52056 Aachen, Germany"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2005,
        7,
        7
      ]
    ]
  },
  "reference": [
    {
      "key": "2023072522244721000_c1",
      "first-page": "61",
      "volume": "26",
      "year": "1987",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "key": "2023072522244721000_c2",
      "doi-asserted-by": "publisher",
      "first-page": "2849",
      "DOI": "10.1063/1.348620",
      "volume": "69",
      "year": "1991",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023072522244721000_c3",
      "doi-asserted-by": "publisher",
      "first-page": "8357",
      "DOI": "10.1063/1.362548",
      "volume": "79",
      "year": "1996",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023072522244721000_c4",
      "doi-asserted-by": "publisher",
      "first-page": "4775",
      "DOI": "10.1143/JJAP.38.4775",
      "volume": "38",
      "year": "1999",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "key": "2023072522244721000_c5",
      "doi-asserted-by": "publisher",
      "first-page": "5879",
      "DOI": "10.1063/1.371606",
      "volume": "86",
      "year": "1999",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023072522244721000_c6",
      "doi-asserted-by": "publisher",
      "first-page": "6770",
      "DOI": "10.1063/1.371725",
      "volume": "86",
      "year": "1999",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023072522244721000_c7",
      "doi-asserted-by": "publisher",
      "first-page": "1852",
      "DOI": "10.1143/JJAP.37.1852",
      "volume": "37",
      "year": "1998",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "volume-title": "Tech. Dig. - Int. Electron Devices Meet.",
      "key": "2023072522244721000_c8",
      "first-page": "803"
    },
    {
      "year": "2003",
      "key": "2023072522244721000_c9",
      "first-page": "177"
    },
    {
      "year": "2003",
      "key": "2023072522244721000_c10",
      "first-page": "175"
    },
    {
      "key": "2023072522244721000_c11",
      "first-page": "736",
      "volume": "73\u201374",
      "year": "2004",
      "journal-title": "Microelectron. Eng."
    },
    {
      "key": "2023072522244721000_c12",
      "doi-asserted-by": "crossref",
      "first-page": "1878",
      "DOI": "10.1109/TNS.2003.821377",
      "volume": "50",
      "year": "2003",
      "journal-title": "IEEE Trans. Nucl. Sci."
    },
    {
      "year": "2001",
      "key": "2023072522244721000_c13",
      "first-page": "2289"
    },
    {
      "volume-title": "Tech. Dig. - Int. Electron Devices Meet.",
      "key": "2023072522244721000_c14",
      "first-page": "255"
    },
    {
      "key": "2023072522244721000_c15",
      "doi-asserted-by": "publisher",
      "first-page": "1255",
      "DOI": "10.1063/1.97031",
      "volume": "48",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023072522244721000_c16",
      "doi-asserted-by": "crossref",
      "first-page": "278",
      "DOI": "10.1016/0040-6090(95)08205-0",
      "volume": "280",
      "year": "1996",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2023072522244721000_c17",
      "doi-asserted-by": "crossref",
      "first-page": "496",
      "DOI": "10.1016/S0042-207X(00)00211-6",
      "volume": "58",
      "year": "2000",
      "journal-title": "Vacuum"
    },
    {
      "key": "2023072522244721000_c18",
      "doi-asserted-by": "publisher",
      "first-page": "657",
      "DOI": "10.1063/1.373717",
      "volume": "88",
      "year": "2000",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023072522244721000_c19",
      "doi-asserted-by": "crossref",
      "first-page": "249",
      "DOI": "10.1016/S0921-4526(96)00850-2",
      "volume": "229",
      "year": "1997",
      "journal-title": "Physica B"
    },
    {
      "key": "2023072522244721000_c20",
      "doi-asserted-by": "crossref",
      "first-page": "527",
      "DOI": "10.1023/A:1021863605287",
      "volume": "38",
      "year": "2003",
      "journal-title": "J. Mater. Sci."
    },
    {
      "key": "2023072522244721000_c21",
      "first-page": "845",
      "volume": "15",
      "year": "1971",
      "journal-title": "Sov. Phys. Crystallogr."
    },
    {
      "key": "2023072522244721000_c22",
      "unstructured": "H.-W.\u2008W\u00f6ltgens, Ph.D. thesis, RWTH Aachen, 2003."
    },
    {
      "key": "2023072522244721000_c23",
      "doi-asserted-by": "publisher",
      "first-page": "230",
      "DOI": "10.1116/1.1430249",
      "volume": "20",
      "year": "2002",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2023072522244721000_c24",
      "doi-asserted-by": "publisher",
      "first-page": "3168",
      "DOI": "10.1063/1.1351868",
      "volume": "89",
      "year": "2001",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023072522244721000_c25",
      "doi-asserted-by": "publisher",
      "first-page": "4906",
      "DOI": "10.1063/1.359779",
      "volume": "78",
      "year": "1995",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023072522244721000_c26",
      "doi-asserted-by": "publisher",
      "first-page": "1373",
      "DOI": "10.1063/1.1604172",
      "volume": "83",
      "year": "2003",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023072522244721000_c27",
      "first-page": "663",
      "volume": "80",
      "year": "1989",
      "journal-title": "Z. Metallkd."
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.1946197/14956601/014904_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.1946197/14956601/014904_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        25
      ]
    ],
    "date-time": "2023-07-25T22:25:00Z",
    "timestamp": 1690323900000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/98/1/014904/796508/Structural-transformation-of-SbxSe100-x-thin-films"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2005,
        7,
        1
      ]
    ]
  },
  "references-count": 27,
  "journal-issue": {
    "issue": "1",
    "published-print": {
      "date-parts": [
        [
          2005,
          7,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1946197",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2005,
        7,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2005,
        7,
        1
      ]
    ]
  },
  "article-number": "014904"
}