Abstract
Cobalt–polypyrrole(PPy)–cobalt nanowires were fabricated electrochemically in single-wire form inside anodic aluminum oxide templates. These wires were isolated by dissolving the template with chromic acid. Grown cobalt segments at both ends reveal a polycrystalline structure of a hexagonal-closest-packed structure and their [001] directions are 16° off the wire axis. By patterning a gate on one side of the wire, field-effect transistors (FETs) were produced. The measured output and transfer characteristics are as good as or better than film FETs of PPy. The gain of the wire FET could be controlled with successive electrochemical doping of the PPy segment.
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Dates
Type | When |
---|---|
Created | 20 years, 3 months ago (June 3, 2005, 7:17 p.m.) |
Deposited | 2 years, 1 month ago (Aug. 1, 2023, 8:08 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:44 a.m.) |
Issued | 20 years, 3 months ago (May 20, 2005) |
Published | 20 years, 3 months ago (May 20, 2005) |
Published Online | 20 years, 3 months ago (May 20, 2005) |
Published Print | 20 years, 3 months ago (May 23, 2005) |
@article{Chung_2005, title={Cobalt–polypyrrole–cobalt nanowire field-effect transistors}, volume={86}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1940125}, DOI={10.1063/1.1940125}, number={21}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chung, Hyun-Jong and Jung, Hun Huy and Cho, Yong-Sung and Lee, Sungjun and Ha, Jeong-Hoon and Choi, Je Hyuk and Kuk, Young}, year={2005}, month=may }