Abstract
We studied the behavior of tungsten wires, fabricated by focused-ion-beam-induced deposition and subjected to high current density. We present a simple electrical treatment, which allows an improved wire resistivity of more than 80%. We have distinguished two steps in the treatment. When the current density reaches 1.4×107A∕cm2, Ga atoms segregate and form droplets on the wire. As the current density increases, new droplets appear and merge into a single droplet. At 5.8×107A∕cm2, the droplet evaporates, the resistance is lost and the wire crystallizes. The final resistivity is close to 55 μΩ cm. The same treatment applied to as-deposited platinum wires does not lead to the same observations: neither segregation nor crystallization was found.
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Dates
Type | When |
---|---|
Created | 20 years, 3 months ago (May 27, 2005, 7:56 p.m.) |
Deposited | 2 years, 1 month ago (July 24, 2023, 3:50 a.m.) |
Indexed | 1 month ago (July 30, 2025, 6:46 a.m.) |
Issued | 20 years, 3 months ago (May 6, 2005) |
Published | 20 years, 3 months ago (May 6, 2005) |
Published Online | 20 years, 3 months ago (May 6, 2005) |
Published Print | 20 years, 3 months ago (May 9, 2005) |
@article{Prestigiacomo_2005, title={Purification and crystallization of tungsten wires fabricated by focused-ion-beam-induced deposition}, volume={86}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1927714}, DOI={10.1063/1.1927714}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Prestigiacomo, M. and Bedu, F. and Jandard, F. and Tonneau, D. and Dallaporta, H. and Roussel, L. and Sudraud, P.}, year={2005}, month=may }