Abstract
Observation of a very high-quality factor (Q) of ∼30,000 is reported for a planar semiconductor microcavity grown by molecular-beam epitaxy using in situ optical monitoring. The very high Qs are measured in pillars of 5–10μm diameter, and are approximately a factor of 3 higher than measured in planar structures before etching. The higher values in the pillars are ascribed to the elimination of the effects of in-plane dispersion, diffraction, and lateral inhomogeneities, thus allowing the intrinsic Q of the planar structure to be observed. Spectrally resolved mode mapping is reported, accounting qualitatively for the decrease of Q with increasing mode number in the pillars.
References
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Dates
Type | When |
---|---|
Created | 20 years, 3 months ago (May 4, 2005, 11:34 p.m.) |
Deposited | 2 years, 1 month ago (July 24, 2023, 3:51 a.m.) |
Indexed | 4 weeks, 2 days ago (July 30, 2025, 6:45 a.m.) |
Issued | 20 years, 3 months ago (May 4, 2005) |
Published | 20 years, 3 months ago (May 4, 2005) |
Published Online | 20 years, 3 months ago (May 4, 2005) |
Published Print | 20 years, 3 months ago (May 9, 2005) |
@article{Sanvitto_2005, title={Observation of ultrahigh quality factor in a semiconductor microcavity}, volume={86}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1925774}, DOI={10.1063/1.1925774}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Sanvitto, D. and Daraei, A. and Tahraoui, A. and Hopkinson, M. and Fry, P. W. and Whittaker, D. M. and Skolnick, M. S.}, year={2005}, month=may }