DOI: 10.1063/1.1923162. Current–voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGe∕n-(001)Ge contact

Current–voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGe∕n-(001)Ge contact

10.1063/1.1923162

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Current–voltage-temperature characterization has been performed on NiGe∕n-(100)Ge Schottky contacts that were formed by the solid-state reaction of Ni with Ge. An effective barrier height of 0.732–0.735eV, which is larger than the band-gap 0.66eV of Ge, was obtained. A physical model describing the current transport mechanism in a Schottky contact with a barrier height larger than the semiconductor band gap is proposed and discussed on the basis of thermionic-field emission as the dominant transport mechanism. The observation of a barrier height larger than the semiconductor band gap should be of technological importance as it suggests that NiGe is an ideal contact and Schottky source/drain material in Ge-based p-metal-oxide-semiconductor field-effect-transistors.

Bibliography

Chi, D. Z., Lee, R. T. P., Chua, S. J., Lee, S. J., Ashok, S., & Kwong, D.-L. (2005). Currentâvoltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGeân-(001)Ge contact. Journal of Applied Physics, 97(11).

Authors 6

D. Z. Chi (first)
R. T. P. Lee (additional)
S. J. Chua (additional)
S. J. Lee (additional)
S. Ashok (additional)
D.-L. Kwong (additional)

References 14 Referenced 35

{'key': '2023073110101317100_c1', 'first-page': '3344', 'volume': '7', 'year': '2001', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (2001)
10.1109/LED.2002.801319 / IEEE Electron Device Lett. (2002)
{'volume-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'key': '2023073110101317100_c3', 'first-page': '441'} / Tech. Dig. - Int. Electron Devices Meet.
10.1109/LED.2004.824249 / IEEE Electron Device Lett. (2004)
10.1016/0040-6090(77)90077-3 / Thin Solid Films (1977)
{'year': '2004', 'key': '2023073110101317100_c6'} (2004)
{'first-page': '99', 'volume-title': 'Metal Semiconductor Contacts', 'year': '1988', 'key': '2023073110101317100_c7'} / Metal Semiconductor Contacts (1988)
10.1063/1.1659990 / J. Appl. Phys. (1971)
10.1016/0038-1101(76)90019-8 / Solid-State Electron. (1976)
{'first-page': '17', 'volume-title': 'Physics of Semiconductor Devices', 'year': '1981', 'key': '2023073110101317100_c10'} / Physics of Semiconductor Devices (1981)
10.1103/PhysRev.125.67 / Phys. Rev. (1962)
10.1016/0038-1101(66)90097-9 / Solid-State Electron. (1966)
{'first-page': '115', 'volume-title': 'Metal Semiconductor Contacts', 'year': '1988', 'key': '2023073110101317100_c13'} / Metal Semiconductor Contacts (1988)
{'volume-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'key': '2023073110101317100_c14', 'first-page': '319'} / Tech. Dig. - Int. Electron Devices Meet.

Dates

Type	When
Created	20 years, 3 months ago (May 24, 2005, 6 p.m.)
Deposited	2 years ago (July 31, 2023, 6:10 a.m.)
Indexed	4 weeks, 2 days ago (July 30, 2025, 6:44 a.m.)
Issued	20 years, 3 months ago (May 26, 2005)
Published	20 years, 3 months ago (May 26, 2005)
Published Online	20 years, 3 months ago (May 26, 2005)
Published Print	20 years, 2 months ago (June 1, 2005)

Funders 0

None

BibTeX

@article{Chi_2005, title={Current–voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGe∕n-(001)Ge contact}, volume={97}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1923162}, DOI={10.1063/1.1923162}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Chi, D. Z. and Lee, R. T. P. and Chua, S. J. and Lee, S. J. and Ashok, S. and Kwong, D.-L.}, year={2005}, month=may }

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