Abstract
Highly ordered AlN nanowire arrays were synthesized via a simple physical vapor deposition method on sapphire substrate. The nanowires have an extremely sharp tip <10nm, with the average length around 3 μm. Raman spectroscopy analysis on the AlN nanowire arrays revealed that the lifetime of the phonons is shorter than that in bulk AlN. The transmission spectra of the AlN nanowires showed a blueshift ∼0.27eV at the absorption edge with that of the bulk AlN, which is closely related to the small size of the nanowires.
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Dates
Type | When |
---|---|
Created | 20 years, 4 months ago (April 29, 2005, 6:57 p.m.) |
Deposited | 2 years, 1 month ago (July 24, 2023, 3:49 a.m.) |
Indexed | 1 month ago (July 30, 2025, 6:44 a.m.) |
Issued | 20 years, 4 months ago (May 2, 2005) |
Published | 20 years, 4 months ago (May 2, 2005) |
Published Online | 20 years, 4 months ago (May 2, 2005) |
Published Print | 20 years, 3 months ago (May 9, 2005) |
@article{Zhao_2005, title={Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate}, volume={86}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1922577}, DOI={10.1063/1.1922577}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zhao, Qing and Zhang, Hongzhou and Xu, Xiangyu and Wang, Zhe and Xu, Jun and Yu, Dapeng and Li, Guohua and Su, Fuhai}, year={2005}, month=may }