Abstract
Nanometer-sized coaxial cables with a single-crystal ZnS core and a thin amorphous SiO2 shell were synthesized by simple thermal evaporation in vacuum. As-fabricated ZnS/SiO2 nanocables were studied using scanning electron microscopy, x-ray diffraction and transmission electron microscopy. The ZnS/SiO2 nanocables have diameters of ∼50nm, lengths of several tens of micrometers, and shell thickness of ∼4nm. The core of the nanocable has a wurtzite structure with a growth direction along [001]. The nanocables show strong photoluminescence with two peaks related to band gap and defect-related emission.
References
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Dates
Type | When |
---|---|
Created | 20 years, 4 months ago (April 20, 2005, 6:24 p.m.) |
Deposited | 2 years, 2 months ago (July 2, 2023, 8:31 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:44 a.m.) |
Issued | 20 years, 4 months ago (April 21, 2005) |
Published | 20 years, 4 months ago (April 21, 2005) |
Published Online | 20 years, 4 months ago (April 21, 2005) |
Published Print | 20 years, 4 months ago (April 25, 2005) |
@article{Fan_2005, title={Formation of ZnS/SiO2 nanocables}, volume={86}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1919394}, DOI={10.1063/1.1919394}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Fan, Xia and Meng, Xiang-Min and Zhang, Xiao-Hong and Wu, Shi-Kang and Lee, Shuit-Tong}, year={2005}, month=apr }