Abstract
Occupation of individual electron states near the surface of a SiO2 film is controlled by reversible single-electron tunneling to or from a metallic electrostatic force microscope probe. By switching the polarity of an applied dc bias between the probe and the sample to adjust the Fermi energy of the probe with respect to states near the dielectric surface, individual electrons are repeatably manipulated in and out of the sample. The single-electron charging and discharging is detected by frequency detection electrostatic force microscopy.
References
7
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Dates
Type | When |
---|---|
Created | 20 years, 4 months ago (April 12, 2005, 6:01 p.m.) |
Deposited | 2 years, 2 months ago (June 23, 2023, 2:56 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:45 a.m.) |
Issued | 20 years, 4 months ago (April 13, 2005) |
Published | 20 years, 4 months ago (April 13, 2005) |
Published Online | 20 years, 4 months ago (April 13, 2005) |
Published Print | 20 years, 4 months ago (April 18, 2005) |
@article{Bussmann_2005, title={Single-electron manipulation to and from a SiO2 surface by electrostatic force microscopy}, volume={86}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1897429}, DOI={10.1063/1.1897429}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bussmann, E. and Zheng, N. and Williams, C. C.}, year={2005}, month=apr }