Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Occupation of individual electron states near the surface of a SiO2 film is controlled by reversible single-electron tunneling to or from a metallic electrostatic force microscope probe. By switching the polarity of an applied dc bias between the probe and the sample to adjust the Fermi energy of the probe with respect to states near the dielectric surface, individual electrons are repeatably manipulated in and out of the sample. The single-electron charging and discharging is detected by frequency detection electrostatic force microscopy.

Bibliography

Bussmann, E., Zheng, N., & Williams, C. C. (2005). Single-electron manipulation to and from a SiO2 surface by electrostatic force microscopy. Applied Physics Letters, 86(16).

Authors 3
  1. E. Bussmann (first)
  2. N. Zheng (additional)
  3. C. C. Williams (additional)
References 7 Referenced 16
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  2. {'edition': 'Revised Ed.', 'volume-title': 'Scanning Force Microscopy with Applications to Electric, Magnetic, and Atomic Forces', 'year': '1994', 'key': '2023062115523611100_c2'} / Scanning Force Microscopy with Applications to Electric, Magnetic, and Atomic Forces (1994)
  3. 10.1063/1.1525886 / Appl. Phys. Lett. (2002)
  4. 10.1063/1.1795979 / Appl. Phys. Lett. (2004)
  5. {'key': '2023062115523611100_c5'}
  6. {'volume-title': 'Introduction to Scanning Tunneling Microscopy', 'year': '1993', 'key': '2023062115523611100_c6'} / Introduction to Scanning Tunneling Microscopy (1993)
  7. 10.1063/1.1641519 / J. Appl. Phys. (2004)
Dates
Type When
Created 20 years, 4 months ago (April 12, 2005, 6:01 p.m.)
Deposited 2 years, 2 months ago (June 23, 2023, 2:56 p.m.)
Indexed 1 month ago (July 30, 2025, 6:45 a.m.)
Issued 20 years, 4 months ago (April 13, 2005)
Published 20 years, 4 months ago (April 13, 2005)
Published Online 20 years, 4 months ago (April 13, 2005)
Published Print 20 years, 4 months ago (April 18, 2005)
Funders 0

None

@article{Bussmann_2005, title={Single-electron manipulation to and from a SiO2 surface by electrostatic force microscopy}, volume={86}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1897429}, DOI={10.1063/1.1897429}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bussmann, E. and Zheng, N. and Williams, C. C.}, year={2005}, month=apr }