Abstract
The electronic screening length, the distance over which an electric field is attenuated in a material, imposes a lower physical bound on the lateral size scaling of semiconductor field effect devices. Alternatives will be needed to achieve devices whose characteristic dimensions approach a nanometer. In this work, we demonstrate the atomic-scale nature of screening at high electron densities, using the polarization field of a ferroelectric oxide, Pb(Zr,Ti)O3, to electrostatically modulate the metallicity of ultrathin manganite La1−xSrxMnO3 (LSMO) films near the metal-insulator transition. Within the screening length, the transport characteristics of LSMO vary sharply at the scale of a single atomic layer.
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Dates
Type | When |
---|---|
Created | 20 years, 4 months ago (March 25, 2005, 6:01 p.m.) |
Deposited | 2 years, 1 month ago (July 2, 2023, 3:36 p.m.) |
Indexed | 3 days, 11 hours ago (Aug. 19, 2025, 6:08 a.m.) |
Issued | 20 years, 4 months ago (March 28, 2005) |
Published | 20 years, 4 months ago (March 28, 2005) |
Published Online | 20 years, 4 months ago (March 28, 2005) |
Published Print | 20 years, 4 months ago (April 4, 2005) |
@article{Hong_2005, title={Examining the screening limit of field effect devices via the metal-insulator transition}, volume={86}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1897076}, DOI={10.1063/1.1897076}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hong, X. and Posadas, A. and Ahn, C. H.}, year={2005}, month=mar }