Abstract
This letter reports a charge transfer p-doping scheme which utilizes one-electron oxidizing molecules to obtain stable, unipolar carbon nanotube transistors with a self-aligned gate structure. This doping scheme allows one to improve carrier injection, tune the threshold voltage Vth, and enhance the device performance in both the “ON-” and “OFF-” transistor states. Specifically, the nanotube transistor is converted from ambipolar to unipolar, the device drive current is increased by 2–3 orders of magnitude, the device OFF current is suppressed and an excellent Ion∕Ioff ratio of 106 is obtained. The important role played by metal–nanotube contacts modification through charge transfer is demonstrated.
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Dates
Type | When |
---|---|
Created | 20 years, 5 months ago (March 15, 2005, 6:03 p.m.) |
Deposited | 2 years, 1 month ago (Aug. 1, 2023, 5:12 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:45 a.m.) |
Issued | 20 years, 5 months ago (March 16, 2005) |
Published | 20 years, 5 months ago (March 16, 2005) |
Published Online | 20 years, 5 months ago (March 16, 2005) |
Published Print | 20 years, 5 months ago (March 21, 2005) |
@article{Chen_2005, title={Self-aligned carbon nanotube transistors with charge transfer doping}, volume={86}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1888054}, DOI={10.1063/1.1888054}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chen, Jia and Klinke, Christian and Afzali, Ali and Avouris, Phaedon}, year={2005}, month=mar }