Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

This letter reports a charge transfer p-doping scheme which utilizes one-electron oxidizing molecules to obtain stable, unipolar carbon nanotube transistors with a self-aligned gate structure. This doping scheme allows one to improve carrier injection, tune the threshold voltage Vth, and enhance the device performance in both the “ON-” and “OFF-” transistor states. Specifically, the nanotube transistor is converted from ambipolar to unipolar, the device drive current is increased by 2–3 orders of magnitude, the device OFF current is suppressed and an excellent Ion∕Ioff ratio of 106 is obtained. The important role played by metal–nanotube contacts modification through charge transfer is demonstrated.

Bibliography

Chen, J., Klinke, C., Afzali, A., & Avouris, P. (2005). Self-aligned carbon nanotube transistors with charge transfer doping. Applied Physics Letters, 86(12).

Authors 4
  1. Jia Chen (first)
  2. Christian Klinke (additional)
  3. Ali Afzali (additional)
  4. Phaedon Avouris (additional)
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Dates
Type When
Created 20 years, 5 months ago (March 15, 2005, 6:03 p.m.)
Deposited 2 years, 1 month ago (Aug. 1, 2023, 5:12 p.m.)
Indexed 1 month ago (July 30, 2025, 6:45 a.m.)
Issued 20 years, 5 months ago (March 16, 2005)
Published 20 years, 5 months ago (March 16, 2005)
Published Online 20 years, 5 months ago (March 16, 2005)
Published Print 20 years, 5 months ago (March 21, 2005)
Funders 0

None

@article{Chen_2005, title={Self-aligned carbon nanotube transistors with charge transfer doping}, volume={86}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1888054}, DOI={10.1063/1.1888054}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chen, Jia and Klinke, Christian and Afzali, Ali and Avouris, Phaedon}, year={2005}, month=mar }