DOI: 10.1063/1.1888035. Growth of Ga-doped ZnO nanowires by two-step vapor phase method

Growth of Ga-doped ZnO nanowires by two-step vapor phase method

10.1063/1.1888035

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A two-step route is presented to dope Ga into ZnO nanowires and also fabricate heterostructures of Ga-doped ZnO nanowires on ZnO. The content of Ga in ZnO nanowires is about 7 at. % from energy-dispersive x-ray analysis. The single crystal Ga doped ZnO nanowires with the diameter of 40 nm and the length of 300–500 nm are well aligned on the ZnO bulk. The growth direction is along [001]. Raman scattering analysis shows that the doping of Ga into ZnO nanowires depresses Raman E1L mode of ZnO, manifesting that Ga sites in ZnO are Zn sites (GaZn). The formation mechanism of Zn1−xGaxO nanowires/ZnO heterostructures is proposed.

Bibliography

Xu, C., Kim, M., Chun, J., & Kim, D. (2005). Growth of Ga-doped ZnO nanowires by two-step vapor phase method. Applied Physics Letters, 86(13).

Authors 4

C. Xu (first)
M. Kim (additional)
J. Chun (additional)
D. Kim (additional)

References 28 Referenced 59

10.1126/science.274.5293.1701 / Science (1996)
10.1126/science.283.5401.512 / Science (1999)
10.1063/1.124605 / Appl. Phys. Lett. (1999)
10.1063/1.121658 / Appl. Phys. Lett. (1998)
10.1063/1.124128 / Appl. Phys. Lett. (1999)
10.1063/1.1306658 / Appl. Phys. Lett. (2000)
10.1063/1.1319529 / Appl. Phys. Lett. (2000)
10.1126/science.1060367 / Science (2001)
10.1063/1.99030 / Appl. Phys. Lett. (1988)
10.1063/1.125503 / Appl. Phys. Lett. (1999)
10.1016/0038-1098(96)00340-7 / Solid State Commun. (1996)
10.1063/1.118824 / Appl. Phys. Lett. (1997)
10.1016/S0169-4332(02)00611-6 / Surf. Sci. (2002)
{'key': '2023070219351096100_c14', 'first-page': '3275', 'volume': '76', 'year': '2000', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (2000)
10.1143/JJAP.36.L1453 / Jpn. J. Appl. Phys., Part 2 (1997)
10.1063/1.1331089 / Appl. Phys. Lett. (2000)
10.1088/0268-1242/18/6/101 / Semicond. Sci. Technol. (2003)
10.1063/1.1621729 / Appl. Phys. Lett. (2003)
10.1063/1.118824 / Appl. Phys. Lett. (1997)
10.1063/1.372199 / J. Appl. Phys. (2000)
10.1103/PhysRev.142.570 / Phys. Rev. (1966)
10.1063/1.1781733 / Appl. Phys. Lett. (2004)
10.1063/1.1516616 / J. Appl. Phys. (2002)
10.1063/1.1527228 / Appl. Phys. Lett. (2002)
10.1103/PhysRev.132.1474 / Phys. Rev. (1963)
10.1023/A:1020841213266 / J. Mater. Sci. Lett. (2002)
10.1063/1.1609251 / Appl. Phys. Lett. (2003)
{'key': '2023070219351096100_c26', 'first-page': 'S5807', 'volume': '16', 'year': '2004', 'journal-title': 'J. Phys.: Condens. Matter'} / J. Phys.: Condens. Matter (2004)

Dates

Type	When
Created	20 years, 5 months ago (March 22, 2005, 6:02 p.m.)
Deposited	2 years, 2 months ago (July 2, 2023, 3:35 p.m.)
Indexed	1 month ago (July 30, 2025, 6:45 a.m.)
Issued	20 years, 5 months ago (March 22, 2005)
Published	20 years, 5 months ago (March 22, 2005)
Published Online	20 years, 5 months ago (March 22, 2005)
Published Print	20 years, 5 months ago (March 28, 2005)

Funders 0

None

BibTeX

@article{Xu_2005, title={Growth of Ga-doped ZnO nanowires by two-step vapor phase method}, volume={86}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1888035}, DOI={10.1063/1.1888035}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Xu, C. and Kim, M. and Chun, J. and Kim, D.}, year={2005}, month=mar }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:45:41Z",
    "timestamp": 1753872341554,
    "version": "3.41.2"
  },
  "reference-count": 28,
  "publisher": "AIP Publishing",
  "issue": "13",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2005,
        3,
        28
      ]
    ]
  },
  "abstract": "<jats:p>A two-step route is presented to dope Ga into ZnO nanowires and also fabricate heterostructures of Ga-doped ZnO nanowires on ZnO. The content of Ga in ZnO nanowires is about 7 at.\u2009% from energy-dispersive x-ray analysis. The single crystal Ga doped ZnO nanowires with the diameter of 40 nm and the length of 300\u2013500 nm are well aligned on the ZnO bulk. The growth direction is along [001]. Raman scattering analysis shows that the doping of Ga into ZnO nanowires depresses Raman E1L mode of ZnO, manifesting that Ga sites in ZnO are Zn sites (GaZn). The formation mechanism of Zn1\u2212xGaxO nanowires/ZnO heterostructures is proposed.</jats:p>",
  "DOI": "10.1063/1.1888035",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2005,
        3,
        22
      ]
    ],
    "date-time": "2005-03-22T23:02:03Z",
    "timestamp": 1111532523000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 59,
  "title": "Growth of Ga-doped ZnO nanowires by two-step vapor phase method",
  "prefix": "10.1063",
  "volume": "86",
  "author": [
    {
      "given": "C.",
      "family": "Xu",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Pohang University of Science and Technology Physics Department and Electron Spin Science Center, , San 31, Hyoja-Dong, Namku, Kyungbuk 790-784, Republic of Korea"
        }
      ]
    },
    {
      "given": "M.",
      "family": "Kim",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Pohang University of Science and Technology Physics Department and Electron Spin Science Center, , San 31, Hyoja-Dong, Namku, Kyungbuk 790-784, Republic of Korea"
        }
      ]
    },
    {
      "given": "J.",
      "family": "Chun",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Pohang University of Science and Technology Physics Department and Electron Spin Science Center, , San 31, Hyoja-Dong, Namku, Kyungbuk 790-784, Republic of Korea"
        }
      ]
    },
    {
      "given": "D.",
      "family": "Kim",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Pohang University of Science and Technology Physics Department and Electron Spin Science Center, , San 31, Hyoja-Dong, Namku, Kyungbuk 790-784, Republic of Korea"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2005,
        3,
        22
      ]
    ]
  },
  "reference": [
    {
      "key": "2023070219351096100_c1",
      "doi-asserted-by": "publisher",
      "first-page": "1701",
      "DOI": "10.1126/science.274.5293.1701",
      "volume": "274",
      "year": "1996",
      "journal-title": "Science"
    },
    {
      "key": "2023070219351096100_c2",
      "doi-asserted-by": "publisher",
      "first-page": "512",
      "DOI": "10.1126/science.283.5401.512",
      "volume": "283",
      "year": "1999",
      "journal-title": "Science"
    },
    {
      "key": "2023070219351096100_c3",
      "doi-asserted-by": "publisher",
      "first-page": "1086",
      "DOI": "10.1063/1.124605",
      "volume": "75",
      "year": "1999",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219351096100_c4",
      "doi-asserted-by": "publisher",
      "first-page": "3437",
      "DOI": "10.1063/1.121658",
      "volume": "72",
      "year": "1998",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219351096100_c5",
      "doi-asserted-by": "publisher",
      "first-page": "3462",
      "DOI": "10.1063/1.124128",
      "volume": "74",
      "year": "1999",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219351096100_c6",
      "doi-asserted-by": "publisher",
      "first-page": "830",
      "DOI": "10.1063/1.1306658",
      "volume": "77",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219351096100_c7",
      "doi-asserted-by": "publisher",
      "first-page": "2767",
      "DOI": "10.1063/1.1319529",
      "volume": "77",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219351096100_c8",
      "doi-asserted-by": "crossref",
      "first-page": "1897",
      "DOI": "10.1126/science.1060367",
      "volume": "292",
      "year": "2001",
      "journal-title": "Science"
    },
    {
      "key": "2023070219351096100_c9",
      "doi-asserted-by": "publisher",
      "first-page": "138",
      "DOI": "10.1063/1.99030",
      "volume": "52",
      "year": "1988",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219351096100_c10",
      "doi-asserted-by": "publisher",
      "first-page": "3947",
      "DOI": "10.1063/1.125503",
      "volume": "75",
      "year": "1999",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219351096100_c11",
      "doi-asserted-by": "publisher",
      "first-page": "873",
      "DOI": "10.1016/0038-1098(96)00340-7",
      "volume": "99",
      "year": "1996",
      "journal-title": "Solid State Commun."
    },
    {
      "key": "2023070219351096100_c12",
      "doi-asserted-by": "publisher",
      "first-page": "2230",
      "DOI": "10.1063/1.118824",
      "volume": "70",
      "year": "1997",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219351096100_c13",
      "doi-asserted-by": "crossref",
      "first-page": "291",
      "DOI": "10.1016/S0169-4332(02)00611-6",
      "volume": "195",
      "year": "2002",
      "journal-title": "Surf. Sci."
    },
    {
      "key": "2023070219351096100_c14",
      "first-page": "3275",
      "volume": "76",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219351096100_c15",
      "doi-asserted-by": "publisher",
      "first-page": "L1453",
      "DOI": "10.1143/JJAP.36.L1453",
      "volume": "36",
      "year": "1997",
      "journal-title": "Jpn. J. Appl. Phys., Part 2"
    },
    {
      "key": "2023070219351096100_c16",
      "doi-asserted-by": "publisher",
      "first-page": "3761",
      "DOI": "10.1063/1.1331089",
      "volume": "77",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219351096100_c17",
      "doi-asserted-by": "crossref",
      "first-page": "L27",
      "DOI": "10.1088/0268-1242/18/6/101",
      "volume": "18",
      "year": "2003",
      "journal-title": "Semicond. Sci. Technol."
    },
    {
      "key": "2023070219351096100_c18",
      "doi-asserted-by": "publisher",
      "first-page": "3401",
      "DOI": "10.1063/1.1621729",
      "volume": "83",
      "year": "2003",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219351096100_c19",
      "doi-asserted-by": "publisher",
      "first-page": "2230",
      "DOI": "10.1063/1.118824",
      "volume": "70",
      "year": "1997",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219351096100_c20",
      "doi-asserted-by": "publisher",
      "first-page": "2445",
      "DOI": "10.1063/1.372199",
      "volume": "87",
      "year": "2000",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070219351096100_c21",
      "doi-asserted-by": "publisher",
      "first-page": "570",
      "DOI": "10.1103/PhysRev.142.570",
      "volume": "142",
      "year": "1966",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2023070219351096100_c22a",
      "doi-asserted-by": "publisher",
      "first-page": "1511",
      "DOI": "10.1063/1.1781733",
      "volume": "85",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219351096100_c22b",
      "doi-asserted-by": "publisher",
      "first-page": "5856",
      "DOI": "10.1063/1.1516616",
      "volume": "92",
      "year": "2002",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070219351096100_c22c",
      "doi-asserted-by": "publisher",
      "first-page": "4446",
      "DOI": "10.1063/1.1527228",
      "volume": "81",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219351096100_c23",
      "doi-asserted-by": "publisher",
      "first-page": "1474",
      "DOI": "10.1103/PhysRev.132.1474",
      "volume": "132",
      "year": "1963",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2023070219351096100_c24",
      "doi-asserted-by": "crossref",
      "first-page": "1703",
      "DOI": "10.1023/A:1020841213266",
      "volume": "21",
      "year": "2002",
      "journal-title": "J. Mater. Sci. Lett."
    },
    {
      "key": "2023070219351096100_c25",
      "doi-asserted-by": "publisher",
      "first-page": "1974",
      "DOI": "10.1063/1.1609251",
      "volume": "83",
      "year": "2003",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070219351096100_c26",
      "first-page": "S5807",
      "volume": "16",
      "year": "2004",
      "journal-title": "J. Phys.: Condens. Matter"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.1888035/13603939/133107_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.1888035/13603939/133107_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        2
      ]
    ],
    "date-time": "2023-07-02T19:35:22Z",
    "timestamp": 1688326522000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/86/13/133107/329801/Growth-of-Ga-doped-ZnO-nanowires-by-two-step-vapor"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2005,
        3,
        22
      ]
    ]
  },
  "references-count": 28,
  "journal-issue": {
    "issue": "13",
    "published-print": {
      "date-parts": [
        [
          2005,
          3,
          28
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1888035",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2005,
        3,
        28
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2005,
        3,
        22
      ]
    ]
  },
  "article-number": "133107"
}