DOI: 10.1063/1.1883719. Pre-metallization processing effects on Schottky contacts to AlGaN∕GaN heterostructures

Pre-metallization processing effects on Schottky contacts to AlGaN∕GaN heterostructures

10.1063/1.1883719

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Changes in the Schottky barrier height of Ni on AlGaN∕GaN heterostructure field effect transistor structures are characterized by internal photoemission spectroscopy (IPE) as a function of pre-metallization processing conditions and postmetallization ultrahigh vacuum annealing. Low energy electron-excited nanoluminescence spectroscopy and mapping reveal AlGaN near band edge emission variations that correlate with IPE Schottky barrier height. Ni∕AlGaN interface impurities measured by secondary ion mass spectrometry are also correlated with IPE Schottky barrier height. We show that changes in the Schottky barrier height and the appearance of dual barriers are dominated by changes in the local Al mole fraction. Interfacial oxygen and carbon have secondary but systematic effects as well.

Bibliography

Bradley, S. T., Goss, S. H., Hwang, J., Schaff, W. J., & Brillson, L. J. (2005). Pre-metallization processing effects on Schottky contacts to AlGaNâGaN heterostructures. Journal of Applied Physics, 97(8).

Authors 5

S. T. Bradley (first)
S. H. Goss (additional)
J. Hwang (additional)
W. J. Schaff (additional)
L. J. Brillson (additional)

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Dates

Type	When
Created	20 years, 4 months ago (March 30, 2005, 6:45 p.m.)
Deposited	1 year, 7 months ago (Jan. 24, 2024, 7:08 a.m.)
Indexed	4 weeks ago (July 30, 2025, 6:45 a.m.)
Issued	20 years, 4 months ago (April 1, 2005)
Published	20 years, 4 months ago (April 1, 2005)
Published Online	20 years, 4 months ago (April 1, 2005)
Published Print	20 years, 4 months ago (April 15, 2005)

Funders 0

None

BibTeX

@article{Bradley_2005, title={Pre-metallization processing effects on Schottky contacts to AlGaN∕GaN heterostructures}, volume={97}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1883719}, DOI={10.1063/1.1883719}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Bradley, S. T. and Goss, S. H. and Hwang, J. and Schaff, W. J. and Brillson, L. J.}, year={2005}, month=apr }

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