DOI: 10.1063/1.1881773. Mapping of local oxide properties by quantitative scanning capacitance spectroscopy

Mapping of local oxide properties by quantitative scanning capacitance spectroscopy

10.1063/1.1881773

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

In this work, quantitative scanning capacitance spectroscopy was applied to investigate the local dielectric properties of a chemical vapor deposition grown ZrO2 layer on low-doped silicon. Due to self-organization effects during the growth process, the ZrO2 layer shows small, periodic thickness variations on micrometer length scales near the sample edges. The measured capacitance data and derived oxide charge densities show the same periodicity as the thickness variations. The magnitude of the change of the oxide charge density, however, cannot be explained by the small thickness variations and is attributed to a local periodic change of the growth dynamics.

Bibliography

Brezna, W., Harasek, S., Lugstein, A., Leitner, T., Hoffmann, H., Bertagnolli, E., & Smoliner, J. (2005). Mapping of local oxide properties by quantitative scanning capacitance spectroscopy. Journal of Applied Physics, 97(9).

Authors 7

W. Brezna (first)
S. Harasek (additional)
A. Lugstein (additional)
T. Leitner (additional)
H. Hoffmann (additional)
E. Bertagnolli (additional)
J. Smoliner (additional)

References 15 Referenced 11

10.1116/1.1351802 / J. Vac. Sci. Technol. A (2001)
10.1016/S0022-3093(02)00959-6 / J. Non-Cryst. Solids (2002)
10.1116/1.1566786 / J. Vac. Sci. Technol. A (2003)
{'key': '2023080110270880700_c4', 'first-page': 'C5', 'volume': '5', 'year': '1995', 'journal-title': 'J. Phys. IV'} / J. Phys. IV (1995)
10.1063/1.1602577 / Appl. Phys. Lett. (2003)
10.1063/1.1498964 / J. Appl. Phys. (2002)
10.1116/1.1566786 / J. Vac. Sci. Technol. A (2003)
10.1063/1.1752106 / Rev. Sci. Instrum. (1999)
10.1116/1.591231 / J. Vac. Sci. Technol. B (2000)
10.1088/0022-3735/21/2/003 / J. Phys. E (1988)
10.1116/1.591198 / J. Vac. Sci. Technol. B (2000)
10.1063/1.1628402 / Appl. Phys. Lett. (2003)
{'volume-title': 'MOS (Metal Oxide Semiconductor) Physics and Technology', 'year': '1982', 'key': '2023080110270880700_c13'} / MOS (Metal Oxide Semiconductor) Physics and Technology (1982)
10.1063/1.1310635 / Appl. Phys. Lett. (2000)
{'key': '2023080110270880700_c15'}

Dates

Type	When
Created	20 years, 4 months ago (April 12, 2005, 6:01 p.m.)
Deposited	2 years, 1 month ago (Aug. 1, 2023, 6:27 a.m.)
Indexed	1 month, 1 week ago (July 30, 2025, 6:45 a.m.)
Issued	20 years, 4 months ago (April 14, 2005)
Published	20 years, 4 months ago (April 14, 2005)
Published Online	20 years, 4 months ago (April 14, 2005)
Published Print	20 years, 4 months ago (May 1, 2005)

Funders 0

None

BibTeX

@article{Brezna_2005, title={Mapping of local oxide properties by quantitative scanning capacitance spectroscopy}, volume={97}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1881773}, DOI={10.1063/1.1881773}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Brezna, W. and Harasek, S. and Lugstein, A. and Leitner, T. and Hoffmann, H. and Bertagnolli, E. and Smoliner, J.}, year={2005}, month=apr }

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