DOI: 10.1063/1.1879075. Dielectric properties of A- and B-site doped BaTiO3(II):La- and Ga-doped solid solutions

Dielectric properties of A- and B-site doped BaTiO3(II):La- and Ga-doped solid solutions

10.1063/1.1879075

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Extremely small amounts of codoping La and Ga on the A and B sites of BaTiO3, respectively, resulting in a solid solution of the type Ba1−3xLa2xGa4xTi1−3xO3, have been investigated. The compounds have been prepared by conventional solid-state reaction. The x-ray diffraction (XRD) shows the presence of the tetragonal (P4∕mmm) phase only. The XRD data have been analyzed using the FULLPROF Rietveld refinement package. The compositions have been characterized by dielectric spectroscopy between room temperature and 200°C. The resulting compounds (0⩽x⩽0.008) exhibit a remarkable decrease in Curie temperature as well as a significant enhancement in the dielectric constant.

Bibliography

Gulwade, D. D., Bobade, S. M., Kulkarni, A. R., & Gopalan, P. (2005). Dielectric properties of A- and B-site doped BaTiO3(II):La- and Ga-doped solid solutions. Journal of Applied Physics, 97(7).

Authors 4

D. D. Gulwade (first)
S. M. Bobade (additional)
A. R. Kulkarni (additional)
P. Gopalan (additional)

References 13 Referenced 20

10.1103/PhysRev.17.475 / Phys. Rev. (1921)
10.1063/1.1879074 / J. Appl. Phys. (2005)
10.1063/1.1330218 / Appl. Phys. Lett. (2000)
10.1063/1.1421206 / J. Appl. Phys. (2002)
10.1016/0022-3697(80)90115-8 / J. Phys. Chem. Solids (1980)
10.1016/S0254-0584(97)80267-2 / Mater. Chem. Phys. (1997)
{'year': '2000', 'key': '2023070515073624700_c7'} (2000)
10.1103/PhysRevB.51.2694 / Phys. Rev. B (1995)
10.1016/S0254-0584(01)00356-X / Mater. Chem. Phys. (2002)
10.1088/0953-8984/14/38/313 / J. Phys.: Condens. Matter (2002)
10.1080/00150198208260644 / Integr. Ferroelectr. (1982)
10.1016/S0921-5107(99)00149-X / Mater. Sci. Eng., B (1999)
10.1088/0953-8984/13/50/333 / J. Phys.: Condens. Matter (2001)

Dates

Type	When
Created	20 years, 5 months ago (March 22, 2005, 6:02 p.m.)
Deposited	2 years, 1 month ago (July 5, 2023, 3:54 p.m.)
Indexed	1 month ago (July 30, 2025, 6:44 a.m.)
Issued	20 years, 5 months ago (March 24, 2005)
Published	20 years, 5 months ago (March 24, 2005)
Published Online	20 years, 5 months ago (March 24, 2005)
Published Print	20 years, 5 months ago (April 1, 2005)

Funders 0

None

BibTeX

@article{Gulwade_2005, title={Dielectric properties of A- and B-site doped BaTiO3(II):La- and Ga-doped solid solutions}, volume={97}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1879075}, DOI={10.1063/1.1879075}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Gulwade, D. D. and Bobade, S. M. and Kulkarni, A. R. and Gopalan, P.}, year={2005}, month=mar }

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